Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells

Yimeng Li,Changcheng Cui,Hao Wei,Zhipeng Shao,Zucheng Wu,Shu Zhang,Xiao Wang,Shuping Pang,Guanglei Cui
DOI: https://doi.org/10.1002/adma.202400138
IF: 29.4
2024-02-26
Advanced Materials
Abstract:Kesterites Cu2ZnSn(SxSe1‐x)4 (CZTSSe) solar cells suffer from severe open‐circuit voltage (VOC) loss due to the numerous secondary phases and defects. The prevailing notion attributes this issue to Sn‐loss during the selenization. However, this work unveils that, instead of Sn‐loss, elemental inhomogeneity caused by Cu‐directional diffusion towards Mo(S,Se)2 layer, is the critical factor in the formation of secondary phases and defects. This diffusion decreases the Cu/(Zn+Sn) ratio to 53% at the bottom fine‐grain layer, increasing the Sn‐/Zn‐related bulk defects. By suppressing the Cu‐directional diffusion with a blocking layer, we effectively improve the crystal quality and reduce the defect density, leading to a remarkable efficiency of 14.9% with a VOC of 576 mV and a certified efficiency of 14.6%. The findings provide insights into element inhomogeneity, holding significant potential to advance the development of CZTSSe solar cells. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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