Abstract:In this study, a sputtering system was adopted for the preparation of Cu2ZnSnS4 (CZTS) thin films with high material quality. The system precisely controlled the elemental ratio in a copper-zinc-tin (CZT) precursor for contributing to the grain growth of CZTS crystallites, and reduced the detrimental formation of the Cu2-xS secondary phase during the high-temperature sulfurization process. The CZT precursor was prepared in a layer sequence of Zn/Sn/Cu/Zn, as the Cu-capping layer could protect the underlying Zn/Sn bilayer from volatilization during the high-temperature sulfurization. The CZT precursors were subjected to the sulfurization process at varied temperatures ranging from 480 to 560 °C for 20 min to form the CZTS thin film. In this study, the Cu/(Zn + Sn) and Zn/Sn ratios in the CZTS film were studied by energy dispersive X-ray spectroscopy measurements, and both ratios revealed elevations with an increasing sulfurization temperature, owing to the thermal volatilization of Zn and Sn. Thus, the formation of the undesirable Cu2-xS secondary phase was enhanced, and the surface roughness and density of voids on the CZTS thin films were increased. For a reduced Zn/Sn ratio with a reduced sulfurization temperature, the improved CZTS thin-film quality was demonstrated by the increased X-ray diffraction (XRD) and Raman intensity, along with the reduction of the XRD linewidth of the (112) CZTS crystal phase. A CZTS thin film with a sulfurization condition of 500 °C for 20 min showed a low Zn/Sn ratio (at 1.1), along with the features of a dense and smooth thin-film surface. Moreover, a reduced photoluminescence spectra full width at half maximum (FWHM) value of 92.7 meV was observed. In addition, for further improving the grain growth of CZTS, a pre-annealing process of a CZT precursor was conducted at a temperature of 350 °C for 30 min. An enhancement of the CZTS crystallite size with the stoichiometric formation of a CZTS phase and a reduced Cu2-XS phase was observed, indicating the superior material quality of the CZTS thin films.

Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

The Influence of Sulfurization Time and H2S Concentration on the Properties of Cu2ZnSnS4 Thin Films

Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Reaction Time and Film Thickness Effects on Phase Formation and Optical Properties of Solution Processed Cu2ZnSnS4 Thin Films

Investigation of Zn/Sn ratio for improving the material quality of CZTS thin films with the reduction of Cu2-xS secondary phase

Impact of Sulfuration Time on Properties of CuInS2 Films

Study of optical and structural properties of CZTS thin films using copper capping layer and sulfurization to correct stoichiometry.

Phases formation of Cu2ZnSnS4 thin films by sulfurizing stacked precursors by sputtering from CuZn and CuSn targets

Deposition of nano-crystalline Cu2ZnSnS4 thin film in one step without sulfurization: Future prospects

High-sulfur Cu2ZnSn(S,Se)4 Films by Sulfurizing As-Deposited CZTSe Film: the Evolutions of Phase, Crystallinity and S/(S+Se) Ratio

Effect of Heat Treatment on the Property of Cuins2 Thin Film Prepared by Chemical Bath Deposition

Synthesis, Growth and Characterization of Cu2CoSnS4 Thin Films via Thermal Evaporation Method

Growth and properties of CuInS2 films by solid-state sulfurization

FABRICATION AND CHARACTERIZATION OF CuxS THIN FILM BY ELECTRODEPOSITING

Effect of Copper Inclusion in Zinc sulfide Thin Films for Photocatalytic Applications

Formation of Cu2SnS3 thin film by the heat treatment of electrodeposited SnS–Cu layers

Effect of film thickness on structural and optical properties of ZnS:Cu films prepared by vulcanization

Effect of Na Doping on Some Physical Properties of Chemically Sprayed CZTS Thin Films

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method

Investigation on in-situ thermal treatment of room-temperature pulsed laser deposition technique: How to improve Cu2ZnSnS4 films for photoelectric application without sulfurization