Investigation on in-situ thermal treatment of room-temperature pulsed laser deposition technique: How to improve Cu2ZnSnS4 films for photoelectric application without sulfurization

Fengjin Xia,Shuai Ma,Zhenzong Sha,Ruibin Jia,Jianguang Feng,Lifeng Dong,Jingru Tian,Liyan Yu,Hao Lv,Liang Sun

DOI: https://doi.org/10.1016/j.apsusc.2021.150111

IF: 6.7

2021-10-01

Applied Surface Science

Abstract:<p>Is extra sulfurization an indispensable process for synthesizing quaternary chalcogenide? The answer is probably affirmative for most synthesis methods to suppress excessive sulfur vacancies. Pulsed laser deposition (PLD), an acknowledged technique for fabricating films with complex stoichiometry, is a great alternative approach to prepare Cu₂ZnSnS₄ (CZTS) films. However, to prevent evaporative losses the deposition temperature (<em>T</em>_is) must be limited below 400 °C, which makes post-annealing process extremely requisite to improve metastable films. Herein we develop an in-situ thermal treatment technique in room-temperature (RT)-PLD-synthesis of CZTS films to evade extra sulfurization process. According to multi-peaks Gaussian fitting analysis, RT-PLD implementing optimized in-situ treatment can broaden solar absorption of CZTS films, potentially contributed by sub-bandgap absorption due to intrinsic natural-intermedium-band effects of I₂-II-IV-VI₄ chalcogenide compounds. Stabilized chronoamperometry characterization combined with quasi-stoichiometric ratio demonstrates that the RT-PLD technique can equivalently restrain sulfur vacancy generation even without sulfurization. Physical mechanisms associated to order–disorder transitions of polycrystal CZTS during in-situ treatment can interpret morphological "lumpy-smooth-vuggy" transformation along with <em>T</em>_is varied. Therefore, such proposed RT-PLD technique is applicable to prepare polynary compounds with volatile elements and complicated stoichiometry ratio.</p>

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: how to prepare Cu₂ZnSnS₄ (CZTS) thin films during room - temperature pulsed - laser deposition (RT - PLD) by in - situ heat - treatment technology, so as to avoid an additional sulfidation process and improve its performance in optoelectronic applications. Specifically, the researchers explored improving the crystallinity and surface morphology of CZTS thin films by optimizing in - situ heat - treatment conditions without sulfidation, thereby achieving a wider optical absorption range and enhanced photoelectric conversion ability.

The paper mentions that traditional methods for preparing CZTS thin films usually need to be carried out at high temperatures, which will lead to the loss of volatile elements (such as sulfur), thereby generating defects and affecting the optoelectronic properties of the material. In addition, many preparation methods also require an additional sulfidation step to supplement the loss of sulfur, but this will increase process complexity and may introduce contamination. Therefore, this paper proposes a method for preparing CZTS thin films by pulsed - laser deposition combined with in - situ heat - treatment at room - temperature conditions, aiming to overcome the above - mentioned problems and provide a simpler, more efficient and environmentally - friendly preparation scheme.

By this method, the researchers can not only effectively control the stoichiometric ratio of CZTS thin films and reduce the generation of sulfur vacancies, but also observe the sub - band - gap absorption phenomenon caused by the natural intermediate - band effect inside the material, which helps to widen the light - absorption range of CZTS thin films and improve their photoelectric conversion efficiency. In conclusion, this research provides a new idea for the preparation of CZTS thin films and is of great significance for promoting its application in optoelectronic fields such as solar cells.