Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication
Luan Hexin,Zhuang Daming,Cao Mingjie,Liu Jiang
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.08.01
2012-01-01
Abstract:The Cu(In1-xGax)Se2(CIGS) films were deposited by magnetron sputtering,followed by post annealing in a mixture of Ar and Se at a reduced atmospheric pressure.The influencing growth factors,including the deposition rate,sputtering power,annealing temperature and annealing time,on electrical properties of the CIGS were evaluated.The microstructures of the CIGS films were characterized with X-ray diffraction,X-ray fluorescence,scanning electron microscopy,and Hall effect spectroscopy.The results show that the post annealing temperature and annealing time strongly affect the stoichiometries,texture,and phase structures of the CIGS films.For instance,after annealing at 400℃ for 120 min,the re-crystallization resulted in copper pyrite phased CIGS films,accompanied by segregation of Cu and Se.Below 350℃,the impact of annealing was non-observable.The prototyped solar cells were fabricated with the CIGS films as the absorption layer,and the highest conversion efficiency was found to be 7.69%.