Abstract:As one of the leading photovoltaic materials, Cu(In,Ga)(Se,S)(2) has two distinct advantages over other candidates. First, its conduction band and valence band could be independently tuned by adjusting the Ga/(Ga + In) and S/(S + Se), respectively. Next, its composition distribution could be feasibly tuned by controlling the thin film deposition process. These merits have been utilized in fabricating the Cu(In,Ga)(Se,S)(2) solar cells with world record efficiency. However, these features have not yet been satisfactorily simulated. In order to understand the mechanism of high-performance Cu(In,Ga)(Se,S)(2) solar cells, we obtained the tunable bandgap of absorber layer and suitable conduction band offset between absorber layer and buffer layer via Ga and S concentration and gradient, by combining both first-principle calculations and numerical simulations with Poisson equation and the continuity equation. In particular, compared with other photovoltaic materials, the bandgap of Cu(In,Ga)(Se, S)(2) could be tuned flexibly across the layer thickness to realize spatial energy band optimization with doubleconcentration-grading absorber. The efficiency of 23.29% was obtained based on theoretical calculations and numerical simulations, which is almost the same as the reported result, in the considerations of (i) optimum bandgap of absorber, (ii) band energy offset, (iii) double (Ga- and S-) concentration grading, and (iv) low defect density in the absorber layer. In addition, we obtained a Cu(In,Ga)(Se,S)(2) solar cell with a high S content uniform band gap efficiency of 23.53%. Therefore, we provided an understanding for tunable engineered band energy research in high-efficient Cu(In,Ga)(Se,S)(2) solar cells.

Fabrication of In-Situ Ti-doped CuGaS2 Thin Films for Intermediate Band Solar Cell Applications by Sputtering with CuGaS2:Ti Targets

Improved Performance of Dye Sensitized Solar Cells Using Cu-doped TiO2 As Photoanode Materials: Band Edge Movement Study by Spectroelectrochemistry

Synthesis of Titanium-Doped CdIn2S4 Thin Film and Its Photoelectric Properties for Intermediate Band Solar Cells

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

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Optimization of CuInGaSSe properties and CuInGaSSe/CdS interface quality for efficient solar cells processed with CuInGa precursors

Intermediate Band Solar Cell Materials Through the Doping of Group-Va Elements (N, P, As and Sb) in Cu2ZnSiSe4.

Chemical synthesis of Cu(In) metal inks to prepare CuInS2 thin films and solar cells

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Cu–In Intermetallic Compound Inks for CuInS 2 Solar Cells

Modeling and optimization of numerical studies on CuSbS 2 thin film solar cell with ∼ 15% efficiency

Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

Preparation and Characterization of Cuins2 Thin Films for Solar Cells by Chemical Bath Deposition

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Fabrication of Pre-Structured Substrates and Growth of CIGS Micro-Absorbers

The Impact of Ga and S Concentration and Gradient in Cu(In,Ga)(Se,S)2 Solar Cells

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Hybrid Density Functional Theory Study of Cu(In1−xGax)Se2 Band Structure for Solar Cell Application

Prediction of intermediate band in Ti/V doped γ-In2S3

Preparation and Characterization of Cugas2 Thin Films As A Promising Parent Material for Intermediate Band Solar Cells