Abstract:As one of the leading photovoltaic materials, Cu(In,Ga)(Se,S)(2) has two distinct advantages over other candidates. First, its conduction band and valence band could be independently tuned by adjusting the Ga/(Ga + In) and S/(S + Se), respectively. Next, its composition distribution could be feasibly tuned by controlling the thin film deposition process. These merits have been utilized in fabricating the Cu(In,Ga)(Se,S)(2) solar cells with world record efficiency. However, these features have not yet been satisfactorily simulated. In order to understand the mechanism of high-performance Cu(In,Ga)(Se,S)(2) solar cells, we obtained the tunable bandgap of absorber layer and suitable conduction band offset between absorber layer and buffer layer via Ga and S concentration and gradient, by combining both first-principle calculations and numerical simulations with Poisson equation and the continuity equation. In particular, compared with other photovoltaic materials, the bandgap of Cu(In,Ga)(Se, S)(2) could be tuned flexibly across the layer thickness to realize spatial energy band optimization with doubleconcentration-grading absorber. The efficiency of 23.29% was obtained based on theoretical calculations and numerical simulations, which is almost the same as the reported result, in the considerations of (i) optimum bandgap of absorber, (ii) band energy offset, (iii) double (Ga- and S-) concentration grading, and (iv) low defect density in the absorber layer. In addition, we obtained a Cu(In,Ga)(Se,S)(2) solar cell with a high S content uniform band gap efficiency of 23.53%. Therefore, we provided an understanding for tunable engineered band energy research in high-efficient Cu(In,Ga)(Se,S)(2) solar cells.

The Impact of Ga and S Concentration and Gradient in Cu(In,Ga)(Se,S)2 Solar Cells

Hybrid Density Functional Theory Study of Cu(In1−xGax)Se2 Band Structure for Solar Cell Application

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Highly efficient CIGS solar cells based on a new CIGS bandgap gradient design characterized by numerical simulation

Enhancing Photocurrent of Cu(In,Ga)Se2 Solar Cells with Actively Controlled Ga Grading in the Absorber Layer

Intense sulphurization process can lead to superior heterojunction properties in Cu(In,Ga)(S,Se)$_2$ thin-film solar cells

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells.

Tuning the band gap of the CIGS solar buffer layer Cd1−xZnxS (x=0–1) to achieve high efficiency

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Silver-assisted Optimization of Band Gap Gradient Structure of Cu(In,Ga)Se2 Solar Cells Via SCAPS

Vapor Transport Deposition of Sb 2 (S,Se) 3 Solar Cells with Continuously Tunable Band Gaps

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Towards high efficiency inverted Sb2Se3 thin film solar cells

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases

Se-Elemental Concentration Gradient Regulation for Efficient Sb2(S,Se)3 Solar Cells With High Open-Circuit Voltages

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

Optical Properties of Cd1−xZnxS Thin Films for CuInGaSe2 Solar Cell Application

High efficiency wide gap Cu(In,Ga)Se2 solar cells: Influence of buffer layer characteristics

Cesium Modulation in Cu(In, Ga)(S, Se) 2 Solar Cells: Comprehensive Analysis on Interface, Surface, and Grain Boundary

Interface passivation and band alignment of high efficiency Cu(In, Ga)Se2 solar cells: Application of Mo(OxSe1-x)2 buffer layer at Mo/ Cu(In, Ga)Se2 interface