Abstract:Cu(In1-xGax)Se2(CIGS) photon absorption films were grown in two steps: First, CuInGa (CIG) precursors were alternatively deposited, by middle frequency a.c. magnetron sputtering of Cuin and CuGa targets, on glass substrate, and then CuInGa precursors were selenized. CIGS and CIG films were characterized with X-ray diffraction and scanning electron microscopy to evaluate the compositions, stoichiometry and microstructures of the two materials, CIG precursor in particular. The results show that Ga content of CIG precursors strongly affects the CIGS stoichiometry. With appropriate Ga content in CIG precursors, the atomic ratio of Cu/(In + Ga) can be close to 1:1; adjusting the Ga content in the precursor results in a control of Cu/(In + Ga) ratio of the CIGS films with uniformly distributed constituent elements. We found that Cu(In1-xGax)Se2 is mainly a solid solution with Ga atoms substituting In atoms. Cu(In1-xGax)Se2 films with its Cu(In + Ga) ratio being as high as 0.270:1, can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm for CuGa target, respectively.

Segregation of Ga in CuInGaSe2 Films Grown by Magnetron Sputtering and Selenization

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

Effects of Composition Segregation in Cu-In Precursor Films on Microstructures of CIS Films

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Selenization Temperature and Properties of CuInSe2 Films

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing