Abstract:An appropriate gallium (Ga) back gradient in Cu(In,Ga)Se-2 (CIGS) films is vital to achieve solar cells with good device performances. As a steeper Ga back gradient can induce an enhanced electric potential variation or affinity (conduction band) variation, it can make the electrons stay away from the rear contact. In addition, significant lattice distortions can be found at the back gradient of GIGS films, which increases carrier recombination and impedes carrier transport. In this study, by employing an Ag-Se precursor before the CIGS process, silver (Ag) is purposefully doped to the back gradient of CIGS films to reduce the lattice distortions. A comparison of the structure and device characteristics of CIGS films with different Ag-Se deposition durations is carried out. This study suggests that the addition of an Ag-Se precursor can enhance the quality of the CIGS film and modify the back gradient as well as enhance recrystallization, which improves the device performance of solar cells. Simultaneously, the enhanced grain sizes achieved by the Ag-treated process are helpful for the improvement of carrier mobility and the reduction of boundary recombination in CIGS films. Furthermore, the accumulation of indium caused by the Ag-Se precursor film in the first stage should contribute to the formation of a modified back gradient. This work offers an easy route for the control of the Ga back gradient in CIGS thin film solar cells.

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

Diffusion Coefficients of Selenium and Gallium during the Cu(In<sub>1-x</sub>Ga<sub>x</sub>)Se<sub>2</sub> Thin Films Preparation Process

Influences of Ga Gradient Distribution on Cu(In,Ga)Se-2 Film

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Facile Silver-Incorporated Method of Tuning the Back Gradient of Cu(In,Ga)Se2 Films

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Revealing Surface Modifications of Caesium Indium Selenium Treated Cu-rich Cu(In,Ga)Se2: A Study of the Suppression of the Interfacial Recombination

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Comparative Study of the Role of Ga in Cigs Solar Cells with Different Thickness

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

Gallium Grading on the Surface of Cu(In,Ga)Se_2 Absorber and Its Effects on the Performance of Solar Cells

High Efficiency Cigse Solar Cells By Combinatorially Sputtered Cu(In,Ga) Followed By Selenization

Growth of Cu(In,Ga)Se-2 Thin Films Using Ionization Ga Source and Application for Solar Cells

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells.

Effects of Ga-source Temperature on Properties of Cu(In,Ga)Se_2 Thin Films and Solar Cell Fabricated by Three-step Co-evaporation Technique