Tailoring Mo(S,Se)(2) Structure for High Efficient Cu2ZnSn(S,Se)(4) Solar Cells
Shoushuai Gao,Yi Zhang,Jianping Ao,Shuping Lin,Zhaojing Zhang,Xiuling Li,Donggiao Wang,Zhiqiang Zhou,Guozhong Sun,Fangfang Liu,Yun Sun
DOI: https://doi.org/10.1016/j.solmat.2017.10.011
IF: 6.9
2018-01-01
Solar Energy Materials and Solar Cells
Abstract:The direction of Se-Mo-Se sheets to the Mo film is crucial for the thickness of Mo(S,Se)2 and the electrical conductivity, so as the back contact of Cu2ZnSn(S,Se)4 solar cells. In this study, the preferred orientation of Mo(S,Se)2 film changes from (100) peak to (103) peak, i.e. from perpendicular to the substrate to tilted to the substrate for Se-Mo-Se sheets as the roughness decrease of Mo back contact layer. The Se vapor can easily diffuse through the channels between Se-Mo-Se sheets when the formed Mo(S,Se)2 layer is (100) peak preferred with Se-Mo-Se sheets perpendicular to the substrate, and thus excessively thick Mo(S,Se)2 will be formed. Whereas, the Se-Mo-Se sheets are tilted to substrate when the preferred orientation of Mo(S,Se)2 is (103) peak. The tilted Se-Mo-Se sheets can act as a natural Se diffusion barrier to suppress the Se vapor diffusion through the already formed Mo(S,Se)2 layer to further selenize the remaining Mo film, and also can provide a good electrical conductivity. As a result, the thickness of Mo(S,Se)2 sharply decreased from 1500nm to 200nm with the surface morphology change of Mo back contact, which resulting in the decrease of series resistance of Cu2ZnSn(S,Se)4 solar cells from 2.94Ωcm2 to 0.49Ωcm2, and the increase of conversion efficiency of Cu2ZnSn(S,Se)4 solar cells from 6.98% to 9.04%.