Study on the interface layers between cigse absorber and mo back electrode layer

李春雷,庄大明,张弓,栾和新,宋军
DOI: https://doi.org/10.19912/j.0254-0096.2010.06.011
2010-01-01
Abstract:Large area uniform absorbers for CIGSe thin film solar cell could be prepared by a two-step process with combination of precursor deposition and selenization. An interface layer containing small grains and pores was formed between CIGSe absorber layer and Mo back electrode. The formation mechanisms of the interface layer were investigated by selenization of three kinds of CuInGa precursors with different structures. The results show that Ga accumulated on interface results in the formation of small grains. The lack of Se on interface at early stage of selenization is favorable to form volatile In 2Se, which results in the formation of pores.
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