Abstract:An effective strategy of Al3+ cation doping on CdS buffer layer is introduced in Sb2Se3 solar cells. The optimized band alignment, suppressed interface recombination, and enhanced carrier transport, result in the improvement of device performance. Consequently, the champion Sb2Se3/CdS:Al device delivers interesting power conversion efficiency of 8.41%, accompanied with significant increase of short‐circuit current density to 28.26 mA cm−2 compared with un‐doped counterpart. Exhibiting outstanding optoelectronic properties, antimony selenide (Sb2Se3) has attracted considerable interest and has been developed as a light absorber layer for thin‐film solar cells over the decade. However, current state‐of‐the‐art Sb2Se3 devices suffer from unsatisfactory "cliff‐like" band alignment and severe interface recombination loss, which deteriorates device performance. In this study, the heterojunction interface of an Sb2Se3 solar cell is improved by introducing effective aluminum (Al3+) cation into the CdS buffer layer. Then, the energy band alignment of Sb2Se3/CdS:Al heterojunction is modified from a "cliff‐like" structure to a "spike‐like" structure. Finally, heterojunction interface engineering suppresses recombination losses and strengthens carrier transport, resulting in a high efficiency of 8.41% for the substrate‐structured Sb2Se3 solar cell. This study proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, paving a bright avenue to overcome the efficiency bottleneck of Sb2Se3 thin‐film solar cells.

Study of Sb2Se3/Al interface affected by oxygen exposure

Sputtering Al2O3 as an effective interface layer to improve open-circuit voltage and device performance of Sb2Se3 thin-film solar cells

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub>Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub> Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb 2 Se 3 Thin Film Prepared via Magnetron Sputtering.

In Situ Sulfurization to Generate Sb2(Se1 − Xsx)3 Alloyed Films and Their Application for Photovoltaics

Stable and efficient Sb2Se3 solar cells with solution-processed NiOx hole-transport layer

Single-source Thermal Evaporation Converts Anion Controllable Sb 2 (s,se) 3 Film for Fabricating High-Efficiency Solar Cell

A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells

Sputtered and Selenized Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 Mv

Sb2Se3 thin film solar cells in substrate configuration and the back contact selenization

Hydrazine Hydrate‐Induced Surface Modification of CdS Electron Transport Layer Enables 10.30%‐efficient Sb2(S,Se)3 Planar Solar Cells

Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages

Efficiency Improvement of Flexible Sb2Se3 Solar Cells with Non-Toxic Buffer Layer Via Interface Engineering

Efficient CdS/Sb 2 S 3 interfacial modification using sodium borohydride etching for enhanced performance of low-cost full-inorganic antimony-based solar cells

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

InCl3-modified SnO2 As an Electron Transporting Layer for Cd-free Antimony Selenide Solar Cells

Improving the Performance of Sb2Se3 Thin Film Solar Cells over 4% by Controlled Addition of Oxygen During Film Deposition

InCl3-modified SnO2 as Electron Transporting Layer for Cd-free Antimony Selenide solar cells

Preparation of AlSb film by screen printing and sintering method

Back contact interfacial modification mechanism in highly-efficient antimony selenide thin-film solar cells