Abstract:An ammonium sulfide ((NH4)2S) surface treatment strategy is used to tailor the properties of the Sb2(S,Se)3 film. This facial method enables a maximum PCE of 10.41% with a high VOC of 0.686 V. Significantly, the VOC,def is remarkably reduced to 0.49 V, the lowest VOC,def reported thus far for Sb2(S,Se)3 solar cells. Antimony selenosulfide (Sb2(S,Se)3) solar cells bear great potential for sustainable photovoltaic technology, attributed to their excellent semiconductor properties. Despite the encouraging breakthroughs, the efficiency of Sb2(S,Se)3 solar cells still leaves much room for improvement due to the large open‐circuit voltage (VOC) deficit (the radiative VOC limit minus the high VOC). Herein, ammonium sulfide ((NH4)2S) solution is utilized to treat Sb2(S,Se)3 films to tailor their surface properties. The disappearance of the hole defect (H1) and the decrease of the defect concentration of hole defect (H2) confirm that non‐radiative recombination is suppressed greatly. Photovoltage decay lifetime is greatly increases from 67.9 to 297.9 μs. The upshifted valence band maximum optimizes the energy level alignment between the p–n heterojunction, enhancing the carrier transport. Remarkably, this treatment yields a record lowest VOC deficit of 0.49 V by now, and the best device with 10.41% efficiency, ca. 25% improvement over the control device (8.35%). This study provides valuable insight into reducing the VOC deficit in solar cells and related photoelectronic devices by minimizing non‐radiative recombination, and also presents a great potential strategy to achieve the lowest VOC deficit.

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