Abstract:The performance of thermally deposited Sb2Se3 solar cells are severely limited by various bulk and interfacial recombination, instigating large open-circuit voltage (VOC) deficit. Ternary Sb2(S,Se)3 is considered as a remedy, however, it is also subjected to a dilemma that improvement in VOC will be escorted by JSC loss due to the shrinkage of light harvest. Thus, a gradient of S/Se across the film is prerequisite to avoid this detrimental compromise. Herein, we explored the incorporation of S in Sb2Se3 absorber layer evaporated from CdS buffer layer during vapor transport deposition (VTD) process, and its further self-activated diffusion at interface upon ambient storage. For the gradient ITO/CdS/Sb2(S,Se)3/Sb2Se3/Au solar cell, the large bandgap Sb2(S,Se)3 at heterojunction side contributes to high VOC, while the narrow bandgap Sb2Se3 at top side confirms high JSC. Sulfur diffusion at CdS/Sb2Se3 interface also improves the junction quality with an enlarged Vbi, reduced interfacial defects and recombination loss, thus improving VOC from 393 to 430 mV. Such VOC represents the highest value for that of thermally deposited Sb2Se3 solar cells. The champion device also delivers an interesting efficiency of 7.49%. This research provides substantial guidance in exploring efficient approaches to improve the performance of Sb2Se3 solar cells.This article is protected by copyright. All rights reserved.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to improve the open - circuit voltage (VOC) of Sb₂Se₃ thin - film solar cells through the band - gap gradient engineering induced by interface sulfur diffusion (Sulfur Diffusion), while optimizing their overall performance. ### Problem Background: 1. **Energy Crisis and Environmental Issues**: Green renewable energy, especially solar energy, has attracted attention due to its environmental friendliness and sustainability. 2. **Limitations of Existing Materials**: - Materials such as CdTe and CIGS are highly efficient but contain toxic elements (such as Cd, Pb) or scarce elements (such as In, Ga). - Sb₂Se₃ has become a potential alternative material because of its low cost, low toxicity, and abundant reserves on the earth. 3. **Challenges of Sb₂Se₃ Solar Cells**: - Although Sb₂Se₃ has good photoelectric properties, its open - circuit voltage (VOC) increases slowly, which limits the improvement of overall efficiency. - VOC losses are mainly attributed to problems such as deep defects, short carrier lifetimes, unexpected surface/interface recombination, and space - charge - region (SCR) recombination. ### Paper Objectives: The paper proposes a method of forming a band - gap gradient structure in the Sb₂Se₃ absorption layer through interface sulfur diffusion (Sulfur Diffusion) to solve the following problems: 1. **Improve the Open - Circuit Voltage (VOC)**: - Form Sb₂(S, Se)₃ with a large band - gap at the heterojunction interface, thereby increasing VOC. 2. **Maintain a High Short - Circuit Current Density (JSC)**: - Keep pure Sb₂Se₃ with a narrow band - gap at the top to ensure efficient light absorption. 3. **Reduce Interface Defects and Recombination Losses**: - Sulfur diffusion improves the quality of the CdS/Sb₂Se₃ interface, reduces interface and bulk defects, and thus reduces recombination losses. ### Core Mechanisms of the Solution: - **Band - Gap Gradient Engineering**: By introducing sulfur atoms during the deposition process and achieving self - activated sulfur diffusion during the subsequent storage process, a band - gap gradient from the interface to the top is formed in the Sb₂Se₃ thin film. - **Device Structure Optimization**: Adopt a device structure of ITO/CdS/Sb₂(S, Se)₃/Sb₂Se₃/Au, combining a high - band - gap interface layer and a narrow - band - gap top layer to achieve a balance between VOC and JSC. ### Experimental Results: - **Performance Improvement**: - The open - circuit voltage (VOC) has been increased from 393 mV to 430 mV. - The conversion efficiency (PCE) has been increased from 6.83% to 7.49%. - **Mechanism Verification**: - Sulfur diffusion effectively reduces the interface defect density (Ntrap), from 1.82×10¹⁵ cm⁻³ in D0 to 1.44×10¹⁵ cm⁻³ in D6. - Temperature - dependent open - circuit voltage measurements show that the activation energy (Ea) of the D6 device is closer to the band - gap value, indicating that interface recombination has been effectively suppressed. ### Summary: The paper has successfully solved the problem of low VOC in Sb₂Se₃ thin - film solar cells through the interface sulfur diffusion technique while maintaining a high JSC. This method provides new ideas and experimental bases for improving the performance of Sb₂Se₃ solar cells.

Improved Open‐Circuit Voltage of Sb 2 Se 3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

Se-Elemental Concentration Gradient Regulation for Efficient Sb2(S,Se)3 Solar Cells With High Open-Circuit Voltages

Sputtered and Selenized Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 Mv

Vapor Transport Deposition of Sb 2 (S,Se) 3 Solar Cells with Continuously Tunable Band Gaps

Thermal diffused post-selenization for enhancing the photovoltaic performance of thermally evaporated Sb 2 Se 3 solar cell

BRAF mutations in melanocytic lesions and papillary thyroid carcinoma samples identified using melting curve analysis of polymerase chain reaction products.

Magnetron Sputtered Sb2Se3-based Thin Films Towards High Performance Quasi-Homojunction Thin Film Solar Cells

[Transcranial magnetic stimulation of the facial nerve].

Mechanism of Defect Passivation in Sb2Se3 Solar Cells via Buried Selenium Seed Layer

Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells

Oxygen Content Modulation Toward Highly Efficient Sb2Se3 Solar Cells

Temperature‐Gradient Solution Deposition Amends Unfavorable Band Structure of Sb2(S,Se)3 Film for Highly Efficient Solar Cells

Interfacial engineering for high efficiency solution processed Sb2Se3 solar cells

Sputtering Al2O3 as an effective interface layer to improve open-circuit voltage and device performance of Sb2Se3 thin-film solar cells

Quasi-Vertically Oriented Sb 2 Se 3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 mV Prepared via Close-Space Sublimation and Selenization

Suppressing Buried Interface Nonradiative Recombination Losses Towards High‐efficiency Antimony Triselenide Solar Cells

An effective engineering with simultaneous carrier density enhancement and interface optimization enables efficient Sb2Se3 solar cells

Fabricating High‐Efficiency Sb2(S,Se)3 Solar Cells by Novel Additive‐Assisted Longitudinal Component Engineering

Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open‐Circuit Voltage

Bandgap grading via sputtering and post-selenization using SeS2 powder enabling Sb2(S,Se)3 solar cells with 7.1% efficiency

HTL-Free Sb 2 (S, Se) 3 Solar Cells with an Optimal Detailed Balance Band Gap