Abstract:CuGaSe 2 (CGSe) material possesses a wide bandgap of approximately 1.7 eV, making it a promising prospect for top cells in tandem solar cells. Depositing CGSe precursor films by magnetron sputtering of a selenium-rich ceramic target is easy to operate and control. After annealing the precursor films at different temperatures in a selenium-free argon atmosphere, avoiding the use of toxic H 2 Se. To achieve an absorber exhibiting appropriate performance, the morphologies, phase composition, absorption characteristics, roughness, lattice structure, and work function of CGSe absorbers annealed at different temperatures were investigated. The CGSe absorber annealed at 550 °C showed uniform grain, a single-phase composition, high absorbance, flat surface, and compact crystal structure. The absorber annealed at excessive temperature led to the formation of Cu 2-x Se, inducing defects and carrier recombination. The work function of CGSe absorber annealed at 590 °C increases, resulting in the misalignment of its band with the Mo back contact. The enhancement of absorber contributes positively to solar cell device performance. CGSe solar cells prepared using the absorber annealed at 550 °C exhibited excellent photoelectric properties. The increase in minority carrier lifetime and recombination resistance improves the transport characteristics of carriers.

Two-stage method to enhance the grain size of Cu(In,Ga)Se2 absorbers based on sputtering quaternary Cu(In,Ga)Se2 target

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Multi-layer Strategy to Enhance the Grain Size of CIGS Thin Film Fabricating by Single Quaternary CIGS Target

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

A study on mechanisms of Sb-doping induced grain growth for Cu(InGa)Se2 absorbers deposited from quaternary targets

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Effects of Selenization on Phase Transition and S/(S+Se) Ratios of As-Deposited Cu2ZnSnS4 Absorbers Sputtered by a Quaternary Target

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

Cu(In,Ga)Se2 solar cell with 16.7% active‐area efficiency achieved by sputtering from a quaternary target

Eliminating the Excess CuxSe Phase in Cu-rich Cu(In,Ga)Se2 by In2Se3 Treatment

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

The Effects of Selenium Content on Cu(Inga)Se-2 Thin Film Solar Cells by Sputtering from Quaternary Target with Se-Free Post Annealing

Effect of absorber surface modification on the optoelectronic properties of Cu2CdGeSe4 solar cells.

Preparation of wide bandgap CuGaSe 2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target