Abstract:The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target. The precursors are selenized in the H2Se-containing atmosphere to prepare (Ag,Cu)(In,Ga)Se2 (ACIGS) absorbers. The beneficial effects of Ag doping are demonstrated and their mechanism is explained. It is found that Ag doping significantly improves the films crystallinity. This is believed to be due to the lower melting point of chalcopyrite phase obtained by the Ag doping. This leads to a higher migration ability of the atoms that in turn promotes grain boundary migration and improves the film crystallinity. The Ga enrichment at the interface between the absorber and the back electrode is also alleviated during the selenization annealing. It is found that Ag doping within a specific range can passivate the band tail and improve the quality of the films. Therefore, carrier recombination is reduced and carrier transport is improved. The negative effects of excessive Ag are also demonstrated and their origin is revealed. Because the atomic size of Ag is different from that of Cu, for the Ag/(Ag + Cu) ratio (AAC) ≥ 0.030, lattice distortion is aggravated, and significant micro-strain appears. The atomic radius of Ag is close to those of In and Ga, so that the continued increase in AAC will give rise to the AgIn or AgGa defects. Both the structural and compositional defects degrade the quality of the absorbers and the device performance. An excellent absorber can be obtained at AAC of 0.015.

Effect of sputtering sequence on the properties of Ag-Cu-In-Ga metal precursors and reacted (Ag,Cu)(In,Ga)Se<inf>2</inf> films

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

+Three-Step H 2 Se/Ar/H 2 S Reaction of Metal Precursors for Large Area Cu(In,Ga)(Se,S) 2 with Uniform Ga Distribution

Effects of silver-doping on properties of Cu(In,Ga)Se2 films prepared by CuInGa precursors

An Optimized In–CuGa Metallic Precursors for Chalcopyrite Thin Films

Effects of Cu-In Precursor Film Phase Structure on CuInSe2 Film Properties

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Influence of Lamination Modes of CuInGa Precursor Films on Composition and Microstructures of Selenized CuInGa Absorber

Effects of Composition Segregation in Cu-In Precursor Films on Microstructures of CIS Films

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Study on How the Content of Selenium in the Precursors Influences the Properties of CuInSe2 Thin Films

Local Segregation in Cu-In Precursors and Its Effects on Microstructures of Selenized Cuinse2 Thin Films

Influence of a Precursor Film with a Copper Gradient on the Properties of a Copper Indium Gallium Selenide Solar Cell

Effects of sputtering power on compositions and microstructures of precursor films for cigs absorber

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Segregation of Ga in CuInGaSe2 Films Grown by Magnetron Sputtering and Selenization

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying