Abstract:Polycrystalline Cu(In,Ga)Se-2 (CIGS) thin film was prepared by non-vacuum method with nano-metal oxide as starting materials. The evolution of the composition and structure during the preparation process was investigated by field emission scanning electron microscope, high resolution transmission electron microscope, energy dispersive analysis and X-ray diffraction. The properties of CIGS film was characterized using Hall Effect tester and absorption spectroscopic analysis. The results show that the nano-metal oxide is consist of CuO, In2O3, Ga2O3 and copper-indium, copper-gallium binary alloy oxides. The metal oxides gradually transform into Cu11In9 and Cu9In4 during the reduction reaction. Moreover, it forms a large number of pores, which is benefit for the selenide reaction. The selenium vapors enter the film along the pore, react with the reduction product and form CIS and CGS in the selenide process. Then, the polycrystalline CIGS film with the chalcopyrite structure forms. The carrier concentration, mobility and the resistivity of CIGS film are about 2.3x10(15) cm(-3), 217 cm(2)/(V.s) and 36 Omega.cm, respectively. The obtained thin film is a p-type semiconductor with a bandgap of about 1.15 eV.

Synthesis and Characteristics of Cu(In,Ga)Se2 Thin Films from Nanoparticles by Solvothermal Method and Selenisation Process

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

Preparation of Cu(In,Ga)Se2 Thin Film by Solvothermal and Spin-coating Process

Preparation of Cu(In,Ga)Se2 Thin Film by Non-Vacuum Mechanochemical and Spin-Coating Process

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Synthesis and Characterization of CIGS Powder

Preparation of Polycrystalline Cu(In,Ga)Se_2 Thin Film with Nano-metal Oxide:the Chemical Reaction Process and Its Properties

Preparation of High Quality CuIn1-xGaxSe2 Thin Films by Modified Selenization Procedure of Sequential Sputtering Metallic Precursors

Solvothermal Synthesis of Copper Indium Gallium Selenide Powder

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Preparation Of Cu(In1-Xalx)Se-2 Thin Films By Sol-Gel Method

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

Fabrication of Cu(In, Ga)Se-2 Thin Films by Sputtering from A Single Quaternary Chalcogenide Target

Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor

Preparation of Cu(In1−xAlx)Se2 thin films by sol-gel method

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Preparation of Cu(In 1−x Al x )Se 2 thin films by sol-gel method

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors