Preparation of Cu(In1−xAlx)Se2 thin films by sol-gel method

Lingjun Kong,Guilin Chen,Chenchen Yuan,Guoshun Jiang,Changfei Zhu,Weifeng Liu
DOI: https://doi.org/10.1109/ICMREE.2013.6893612
2014-01-01
Abstract:Polycrystalline Cu(In1-xAlx)Se2 (CIAS) thin films with chalcopyrite structure were synthesized by sol-gel spin-coating method using nitrates as precursor for low-cost photovoltaic applications. Sequential reduction and selenization treatments were performed with hydrogen and Se vapor, respectively. X-ray diffraction (XRD), SEM, EDS and UV-visible spectrophotometer analysis have been employed to examine the structural properties, surface morphology, atomic concentrations and band gaps of polycrystalline CIAS thin films. The experimental results demonstrated that the Cu(In1-xAlx)Se2 had good crystallinity, uniformity and stoichiometric composition. Simultaneously, we discussed the phenomenon and mechanism of the two-layered structure formation of the synthesized Cu(In1-xAlx)Se2 thin film.
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