Abstract:This study aimed to fabricate copper indium gallium diselenide (CIGSe) thin films using a novel two-step approach. Firstly, we deposited metallic precursors (Cu/In/Ga) onto a Mo-coated stainless steel substrate using thermal evaporation at unintentional substrate temperature. Subsequently, selenization was carried out in a furnace under the presence of an inert gas. The quality of the CIGSe thin films was analyzed to explore the influence of selenization temperature (450-550°C) and duration (30 and 60 minutes), while maintaining an inert atmosphere inside the selenization furnace. The structural analysis revealed the progressive development of additional phases over time, resulting in the formation of a complete chalcopyrite CIGSe structure with the preferred reflection on the (112) plane. The absorber layer exhibited a thickness of 2 μm, with atomic ratios of 0.83 for Cu/(In+Ga) and 0.24 for Ga/(In+Ga) in the film selenized at 550°C. P-type conductivity was observed in the CIGSe thin film, with a carrier concentration of up to 1017 cm-3, and it displayed a well-defined and uniform morphology characterized by a large grain size of approximately 0.9 μm. Utilizing the optimized conditions, we successfully fabricated solar cells on a flexible substrate, achieving a photoconversion efficiency of up to 9.91%. This research delves into the impact of selenization parameters on the growth of CIGSe absorber layers and introduces a new approach that could significantly influence the feasibility and industrialization of flexible solar cells.

CIGS formation by high temperature selenization of metal precursors in H 2 Se atmosphere

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Cu(In,Ga)Se-2 Solar Cells Fabricated by Sputtering from Copper-Poor and Selenium-Rich Ceramic Target with Selenium-Free Post Treatment

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

Synthesis and Characterization of CIGS Powder

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Influences of Sulfurization on Performances of Cu(In,Ga)(Se,S)2 Cells Fabricated Based on the Method of Sputtering CIGSe Quaternary Target

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Unravelling the Intricacies of Selenization in Sequentially Evaporated Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrates

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Preparation of wide bandgap CuGaSe 2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

Preparation of Wide Bandgap CuGaSe2 Absorbers and Solar Cells by Sputtering a Selenium-Rich Ceramic Target and Annealing in a Selenium-Free Atmosphere

The Effects of Annealing Temperature on CIGS Solar Cells by Sputtering from Quaternary Target with Se-free Post Annealing

Study on Two-Step Process of Preparing CIGS Films

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Effect of Se Vapor Concentration on Cigs Film Preparation