Effect of Vacuum Rapid Annealing Treatment on Performance of CIGS Solar Cells

Tian Li,Zhang Xiao-Yong,Mao Qi-Nan,Li Xue-Geng,Yu Ping-Rong,Wang Dong
DOI: https://doi.org/10.15541/jim20140182
IF: 1.292
2015-01-01
Journal of Inorganic Materials
Abstract:CIGS absorber layers were prepared by sequential sputtering/selenization method. Based on that, CIGS solar cells were fabricated with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Ni-Al grid. The influences of annealing treatment on the performance of CIGS solar cells were investigated. By optimizing annealing condition, the cell efficiency increased from 4.91% to 14.01%. Further investigation revealed that the post-annealing treatment had two advantages. Firstly, it facilitated the diffusion of Cd ions into CIGS surface to substitute the Cu vacancies. Thus, the surface of CIGS converted from p-type to n-type conduction, leading to the shift of p-n junction from CIGS/CdS interface into the CIGS layer. Therefore, the recombination centers at the p-n junction were greatly reduced. Secondly, most H2O molecules being adsorbed on the CIGS surface were eliminated by annealing, which improved the uniformity of electrical properties and band-gap of CIGS layer, resulting better performance of CIGS solar cell.
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