Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells

Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali

DOI: https://doi.org/10.48550/arXiv.1601.06112

2016-01-22

Instrumentation and Detectors

Abstract:In this paper we carried out theoretical study of the general issues related to the efficiency of SiC:H/a-Si:H single- and multi-junction tandem solar cells. Implementation of numerical simulations by the use of AMPS-1D program of one-dimensional analysis of microelectronic and photonic structures for the analysis of hydrogenated silicon solar cells allowed us to formulate the optimal design of new kind of multi-junction tandem solar cells, providing its most efficient operation. The numerical analysis of SiC:H/a-Si:H single-junction solar cell whith doped i-layer used as the intermediate absorbing layer (a -Si: H) placed between layers of p-type (a-SiC: H) and n-type (a-Si: H) has been conducted. It has been established that after optimizing the solar cell parameters its highest efficiency of 19.62% is achieved at 500 nm thickness of i-layer. The optimization of the newly developed multi-junction structure of a-SiC:H/a-Si:H tandem solar cell has been conducted. It has been shown numerically that its highest efficiency of 22.6% is achieved at the thickness of 270 nm of intermediate i-layer.