Abstract:Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compared to PERC, the utilization of n-type wafers with an n-type contact at the back and a p-type diffused boron emitter has become the industry standard in 2024. In this work, variations of this technology are explored, considering p-type passivating contacts on p-type Si wafers formed via a rapid thermal processing (RTP) step. These contacts could be useful in conjunction with n-type contacts for realizing solar cells with passivating contacts on both sides. Here, a particular focus is set on investigating the influence of the applied thermal treatment on the interfacial silicon oxide (SiOx) layer. Thin SiOx layers formed via ultraviolet (UV)-O3 exposure are compared with layers obtained through a plasma treatment with nitrous oxide (N2O). This process is performed in the same plasma enhanced chemical vapor deposition (PECVD) chamber used to grow the Si-based passivating layer, resulting in a streamlined process flow. For both oxide types, the influence of the RTP thermal budget on passivation quality and contact resistivity is investigated. Whereas the UV-O3 oxide shows a pronounced degradation when using high thermal budget annealing (T > 860 °C), the N2O-plasma oxide exhibits instead an excellent passivation quality under these conditions. Simultaneously, the contact resistivity achieved with the N2O-plasma oxide layer is comparable to that yielded by UV-O3-grown oxides. To unravel the mechanisms behind the improved performance obtained with the N2O-plasma oxide at high thermal budget, characterization by high-resolution (scanning) transmission electron microscopy (HR-(S)TEM), X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) is conducted on layer stacks featuring both N2O and UV-O3 oxides after RTP. A breakup of the UV-O3 oxide at high thermal budget is observed, whereas the N2O oxide is found to maintain its structural integrity along the interface. Furthermore, chemical analysis reveals that the N2O oxide is richer in oxygen and contains a higher amount of nitrogen compared to the UV-O3 oxide. These distinguishing characteristics can be directly linked to the enhanced stability exhibited by the N2O oxide under higher annealing temperatures and extended dwell times.

N-type polysilicon passivating contacts using ultra-thin PECVD silicon oxynitrides as the interfacial layer

Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

Phosphorus-diffused polysilicon contacts for solar cells

Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2

Plasma enhanced chemical vapor‐deposited SiOx(Ny)/n‐type polysilicon on oxide passivating contacts in industrial back‐contacted Si solar cells

Plasma Treatment for Chemical SiOx Enables Excellent Passivation of P-Type Polysilicon Passivating Contact Featuring the Lowest J0 Of-6 Fa/cm2

Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing

Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System

Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Improved PECVD SixNy film as a mask layer for deep wet etching of the silicon

Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells

Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

A silicon oxide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 23%

Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer