Abstract:Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β-Ga2O3 materials on SiC substrates, it is essential to understand the influence of the ion-cutting process on the current transport in β-Ga2O3 devices and to further optimize the electrical characteristics of the exfoliated β-Ga2O3 materials. In this work, the high quality of β-Ga2O3/SiC structure was constructed by the ion-cutting process, in which an amorphous layer of only 1.2 nm was formed between β-Ga2O3 and SiC. The current transport characteristics of Au/Pt/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) on SiC were systematically investigated. β-Ga2O3 SBDs with a high rectification ratio of 108 were realized on a heterogeneous β-Ga2O3 on-SiC (GaOSiC) substrate. The net carrier concentration of the β-Ga2O3 thin film for GaOSiC substrate was down to about 8% leading to a significantly higher resistivity, compared to the β-Ga2O3 donor wafer, which is attributed to the increase in acceptor-type implantation defects during the ion-cutting process. Furthermore, temperature-dependent current–voltage characteristics suggested that the reverse leakage current was limited by the thermionic emission at a low electric field, while at a high electric field, it was dominated by the Poole–Frenkel emission from E3 deep donors caused by the implantation-induced GaO antisite defects. These results would advance the development of β-Ga2O3 power devices on high thermal conductivity substrate fabricated by ion-cutting technique.

Rectifying Characteristics of Sputter-Deposited Sige Diodes

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Electrical Properties of PolySiGe Grown by Metal-Induced Growth

Doping properties of the Ion-Beam-Sputtered SiGe Film

Solid-Phase Reaction Between Co, Ni/n-poly-Si0.84Ge0.16 and Schottky Barrier Properties of the Formed Contacts

Electrical Characteristics and Selective Growth of SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Solid-Phase Reaction And Schottky Contact Properties Of Co/N-Poly-Si0.84ge0.16/N-Si(100)

High-Performance Thin-Film IGZO Schottky Diodes with Sputtered PdOₓ Anode

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

Interface engineering in epitaxial growth of sputtered β-Ga 2 O 3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes

Electrical Characteristics of 10-Kv 4H-Sic MPS Rectifiers with High Schottky Barrier Height

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer

Electrical Characterization of Nisi/Si Interfaces Formed by A Single and A Two-Step Rapid Thermal Silicidation

Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

NiSi/p<SUP>+</SUP>-Si(n<SUP>+</SUP>-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?

Electron Beam Evaporation Deposition and Properties of Abrupt GST/Si Heterojunction Structure

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN