Electron Beam Evaporation Deposition and Properties of Abrupt GST/Si Heterojunction Structure

Wenqiang Liu,Ling Xu,Ni Liu,Yuanbao Liao,Dong Liu,Jun Xu,Zhongyuan Ma,Kunji Chen

DOI: https://doi.org/10.1016/j.vacuum.2010.12.015

IF: 4

2012-01-01

Vacuum

Abstract:The ternary alloy, Ge2Te2Sb5 is one of the most important compounds of the GeTe-Sb2Te3 pseudobinary systems. Ge2Te2Sb5 thin films of thickness of 100 nm-300 nm were deposited by electron beam evaporation. After annealing at different temperatures, we did X-ray diffraction measurement to characterize the structure transformation of the material. In-situ resistance measurement depending on the temperature shows that there is about three orders of magnitude change between the high resistance state (amorphous state) and the low resistance state (face-centered cubic state). To construct a heterojunction diode, we deposited Ge2Te2Sb5 thin films on n-type silicon wafers. Rectification effects were observed in voltage current measurements of the abrupt heterojunctions. Traditional voltage current relationship of p-n junctions and metal-semiconductor junctions are used to explain the characteristics of Ge2Te2Sb5/n-Si heterojunctions. (C) 2011 Elsevier Ltd. All rights reserved.