Electrical properties and band alignments of Sb 2 Te 3 /Si heterojunctions; low-barrier Sb 2 Te 3 / n -Si and high-barrier Sb 2 Te 3 / p -Si junctions

Naoya Okada,Wen-Hsin Chang,Shogo Hatayama,Yuta Saito,Toshifumi IRISAWA
DOI: https://doi.org/10.35848/1882-0786/ad2d75
IF: 2.819
2024-02-29
Applied Physics Express
Abstract:We investigated the electrical junction properties of the layered Sb 2 Te 3 film formed on Si substrates. The current−voltage characteristics of the Sb 2 Te 3 /n-Si heterojunction showed an ohmic properties, whereas the Sb 2 Te 3 /p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb 2 Te 3 electrode indicated an effective work function of 4.44 eV for the Sb 2 Te 3 film. These findings suggest that the Sb 2 Te 3 /Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of current−voltage characteristics of the Sb 2 Te 3 /n-Si.
physics, applied
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