Abstract:Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1,2,3,4,5,6,7,8,9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10,11,12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi2Te3, Sb2Te3 and Bi2Se3, has been explored extensively by means of material doping8,9,11 and electrical gating13,14,15,16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (BixSb1–x)2Te3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (BixSb1–x)2Te3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. The bulk conductivity of a topological insulator composed of Bi, Sb and Te can be reduced by orders of magnitude by tuning the ratio of Bi to Sb, allowing surface states to dominate conduction.

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates.

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

Robust topological interface states in a lateral magnetic-topological heterostructure

Demonstration of Surface Transport in a Hybrid Bi2Se3/Bi2Te3 Heterostructure

Unusual Janus Bi 2 TeSe 2 Topological Insulators Displaying Second-Harmonic Generation, Linear-in-Temperature Resistivity, and Weak Antilocalization

Lattice-matched heterojunctions between topological and normal insulators: A first-principles study

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Two-dimensional Superconductivity at the Interface of a Bi2Te3/FeTe Heterostructure

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Monolayer superconductivity and tunable topological electronic structure at the Fe(Te,Se)/Bi2Te3 interface