Abstract:Epitaxial films of cuprous oxide, Cu2O, are electrodeposited from aqueous solution onto single-crystalline Si(001). The epitaxial growth of Cu2O onto Si is an unexpected result, because there is a strong driving force for the oxidation of Si to form a native amorphous SiO2 layer. The Cu2O films are single-crystalline in nature, with little or no fiber texture. High-resolution X-ray diffraction shows that the very large lattice mismatch of -21.4% is reduced to +11.2% by the formation of a Cu2O(001)[100]HSi(001)[110] orientation relationship, in which the film is rotated 45degrees around the common [001] axis. Cross-sectional transmission electron microscopy studies suggest that the growth mechanism involves an initial electroless deposition Of Cu2O epitaxial seeds in direct contact with the Si(001), with the concomitant oxidation of Si to form a layer of amorphous SiO2 about 3 nm thick.. Electrochemical deposition Of Cu2O then proceeds on the epitaxial seeds, with the deposit growing not only perpendicular to the surface, but also laterally across the SiO2 interlayer. This type of lateral overgrowth is used in the production of semiconductor-on-insulator (SOI) structures to avoid defects due to misfit strains.

Study of Si Epitaxy on Porous Si by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

UHV/CVD Si Epitaxial Growth on Double Layer Porous Silicon

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Study of Si and Ge growth on Si(100) surface

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Structural Study Of Chemical Vapor Deposition Of Si On Gan

Ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures

Silicon Epitaxy on Textured Double Layer Porous Silicon by Lpcvd

A Study on Intrinsic Silicon Epitaxy by UHV/CVD

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD

Electrical Characteristics and Selective Growth of SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of SiC Buffers for Strained Si Film Epitaxy