Abstract:Electrochemical etching of silicon carbide (SiC) material has received increasing attention in recent years, due to its simple procedure, low cost and significance in the exploration of novel optoelectronic devices. In this paper, 4H-SiC substrates were electrochemically etched at a constant current density of 392.98 mA cm-2 in an electrolyte made up of hydrofluoric acid and deionized water. The layering of a SiC porous layer and periodic fluctuation of the voltage were witnessed for the first time, with the layering phenomenon corresponding well to the voltage period. However, no such phenomenon was observed when the SiC substrates were anodic etched under the same conditions with magnet stirring. As a result, the periodic variation of voltage was hypothesized to be the cause of regular layering during constant current electrochemical etching. Electrochemical etching in potentiostatic mode was thus performed at different voltages. We found that the diameter of the SiC nanopores increased while the thickness of the sidewall decreased with the increasing voltage. Based on the experimental findings, a model of mass transport was proposed. The mass transport process leads to periodic changes in resistance, hence the periodic change in voltage. This successfully explained the reason for the layering. Furthermore, SiC substrates were also electrochemically etched at high and low current densities, finding the existence of a threshold current density for the occurrence of the layering. Energy dispersive x-ray spectroscopy analysis showed that the composition of the SiC porous layer remained unchanged compared to the pure SiC wafer, implying that the peeling-off of the SiC porous layer obtained by electrochemical etching can be directly adopted for use on devices requiring a SiC porous structure.

UHV/CVD Si Epitaxial Growth on Double Layer Porous Silicon

Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

Study of Si Epitaxy on Porous Si by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate

Silicon Epitaxy on Textured Double Layer Porous Silicon by Lpcvd

Study of Si and Ge growth on Si(100) surface

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Characterization of silicon epitaxial layer growth at low temperature by UHV/CVD

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

3C-SiC Growth on SOI with High Silicon-Over-Layer

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

A Study on Intrinsic Silicon Epitaxy by UHV/CVD

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Growth of SiC Buffers for Strained Si Film Epitaxy

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

Epitaxial Growth of Gan on Porous Si (111) Substrate