Abstract:The continuous evolution of chip manufacturing demands the development of materials with ultra-low dielectric constants. With advantageous dielectric and mechanical properties, initiated chemical vapor deposited (iCVD) poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV 3 D 3 ) emerges as a promising candidate. However, previous works have not explored etching for this cyclosiloxane polymer thin film, which is indispensable for potential applications to the back-end-of-line fabrication. Here, we developed an etching process utilizing O 2 /Ar remote plasma for cyclic removal of iCVD pV 3 D 3 thin film at sub-nanometer scale. We employed in-situ quartz crystal microbalance to investigate the process parameters including the plasma power, plasma duration, and O 2 flow rate. X-ray photoelectron spectroscopy and cross-sectional microscopy reveal the formation of an oxidized skin layer during the etching process. This skin layer further substantiates an etching mechanism driven by surface oxidation and sputtering. Additionally, this oxidized skin layer leads to improved elastic modulus and hardness, and acts as a barrier layer for protecting the bottom cyclosiloxane polymer from further oxidation.

Electrochemical Etching Used on Uhv Cvd Epitaxial Thin Films

An Ultrahigh Vacuum Chemical Vapor Deposition System and Si, GeSi Epitaxy on a Three-Inch Si Wafer

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Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

The Application of a Selective Etch to Conclusively Show the Surface Smoothing Effect of an Amorphous Thin Film Deposited by Atomic Layer Deposition

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

Remote Plasma Enhanced Cyclic Etching of a Cyclosiloxane Polymer Thin Film

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd