Abstract:Over the last decade SiGe has been proposed as a structural material for low thermal budget microelectromechanical systems (MEMS) that can be post-processed on top of standard CMOS driving and controlling electronics [1-6]. There are several ways to decrease the deposition temperature of SiGe and at the same time preserve the desired physical properties for MEMS as low electrical resistivity, high quality factor, economical growth rate and low mean stress and strain gradient. The conventional approach to reduce the crystallization thermal budget is to increase the germanium content to 60%, or more, using conventional Low Pressure Chemical Vapor Deposition (LPCVD) [1-3]. In this case highly conductive polycrystalline films can be realized, but the strain gradient is relatively high. This can be eliminated by furnace annealing at 450°C [2], which might introduce damage to the underlying circuits such as in the case of Cu/low k CMOS. This problem can be alleviated using excimer pulsed laser annealing [7, 8], which has been attractive for low thermal budget applications such as thin film transistors (TFT) [9], solar cells fabricated on glass substrates [10] and for monolithic integration of MEMS devices on top of standard driving electronics using SiGe as an active material [8, 11]. Also the use of hydrogenated microcrystalline SiGe allows for a low thermal budget [12]. In addition, metal induced crystallization has recently been proposed to enhance the crystallization of silicon at temperatures as low as 500°C, and the realized devices had outstanding performance compared to those employing conventional solid-phase crystallization [13]. This technique enhances crystallization by two methods. First, it has been observed that depositing SiGe on top of a thin Al or Ni layer, has a polycrystalline micro-structure close to the metal/ SiGe interface [11]. Annealing this film for a long period (is determined by the annealing temperature), results in metal diffusion and a subsequent crystallization of the film. Finally, when the metal is diffused completely through out the film, it can be etched away. The main disadvantage of this approach is that the mean stress is highly compressive and this might affect the functionality of surface micromachined structures [13].

Thermal etching of SiC

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Impact of rapid thermal annealing on impurities removal efficiency from silicon carbide for optoelectronic applications

Fate of Polymer Derived SiC Monolith at Different High Temperatures

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

High-temperature Microstructure Evolution and Thermal Stability of SiCf/Ti60 Composites

High Temperature Oxidation Behavior of SiC Coating Materials

Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Metal Induced Crystallization of SiGe at 370°C for Monolithically Integrated MEMS Applications

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Ionization-induced annealing of pre-existing defects in silicon carbide

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

Effect of long-time annealing at high temperature on the microstructure and mechanical properties of different types of SiC fibers

Carbon and Silicon Related Surface Compounds of Palladium Ultrathin Films on SiC after Different Annealing Temperatures

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications