Abstract:The chemical principal and mechanisms that enable selective atomic layer depositions are gaining rapid growing interests, which have unlocked attractive avenues for the development of novel nanostructures by depositing atoms at desired surface locations. It has found versatile applications in emerging fields beyond semiconductor industry. Yet with the continuing downscaling, it is important to expand approaches for selective ALD with atomic scale precision on nanoscale features. The self-driven selective growth is needed, modifying specific surface down to atoms, to enable unprecedented capability of tuning the structure-property relationship for emerging applications. In this talk, the inherently selective atomic layer deposition processes will be discussed. Previously, we have demonstrated facet-selective ALD processes, which based on intrinsic differences of precursors chemisorption on terraces or step edges of nanoparticles. To expand the inherently ASD, the acidity and alkaline, surface electronegativity, lattice strains could be exploited to achieve this inhibitor-free selective deposition process. Tantalum oxide was studied on a series of oxide substrates. Although the oxides have -OH groups on the surface and proposed to have similar nucleation sites, there are long nucleation delays on basic oxides. The H-transfer reaction is a key factor to influence the reaction barrier. It is hard to nucleate on basic substrates because the H-transfer reaction is blocked. Another demonstration is the redox-coupled inherently selective ALD for self-alignment of tantalum oxide on SiO 2 /Cu nanopatterns. By adding an in-situ ethanol reduction pulse before each traditional binary ALD cycle, and the ‘reduction-adsorption-oxidation’ ALD process increases the selectivity. Self-aligned manufacturing on nanoscale Cu/SiO 2 patterns without excessive mushroom growth at the edge and undesired nucleation defects on the Cu region. The process can be reliably repeated to yield more than 5 nm-thick Ta 2 O 5 on the SiO 2 region, while no undesired deposition occurs on Cu patterns. In addition, an anisotropic growth model with the dynamical competition of expansion and dissociation of the nucleus is proposed to nucleation delay are quantitively predicted and the model provides a practical method to evaluate the selectivity of ALD theoretically. It provides a new strategy for inherently selective ALD, which will expand the selective toolbox of nanofabrication for next-generation nanoelectronic applications.

The Application of a Selective Etch to Conclusively Show the Surface Smoothing Effect of an Amorphous Thin Film Deposited by Atomic Layer Deposition

Confirmation of the Surface Smoothing Effect of Atomic Layer Deposition and the Physical Mechanism Responsible for Such an Effect

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

Surface Smoothing Effect of an Amorphous Thin Film Deposited by Chemical Vapor Deposition or Atomic Layer Deposition

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

Atomic Force Microscopy Study on Topography of Films Produced by Ion-Based Techniques

Emerging Atomic Layer Deposition Technology toward High-<i>k</i> Gate Dielectrics, Energy, and Photocatalysis Applications

Selective Atomic Layer Deposition to Extend Moore’s Law and Beyond: Surface Kinetic Tuning for Self-Aligned Growth

Atomic Layer Deposition of Metal Oxide Films

Inherently Selective Atomic Layer Deposition and Applications

Surface Acidity-Induced Inherently Selective Atomic Layer Deposition of Tantalum Oxide on Dielectrics

Mechanism of Interfacial Layer Suppression after Performing Surface Al(Ch3)(3) Pretreatment During Atomic Layer Deposition of Al2o3

Spatial Control over Atomic Layer Deposition Using Microcontact-Printed Resists

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Atomic Layer Deposition for Thin Film Solid-State Battery and Capacitor

In situ differential atomic force microscopy (AFM) measurement for ultra-thin Thiol SAM patterns by area-selective deposition technique

Surface Reaction Kinetics for Inherent Selective Atomic Layer Deposition of Tantalum Oxide

Achieving Area-Selective Atomic Layer Deposition on Patterned Substrates by Selective Surface Modification

Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition

Atomic Layer Deposition of Thin Films: from a Chemistry Perspective