Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Temperature-Stable Black Phosphorus Field-Effect Transistors Through Effective Phonon Scattering Suppression On Atomic Layer Deposited Aluminum Nitride

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Black Phosphorus Radio-Frequency Transistors

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

HfO2-passivated Black Phosphorus Field Effect Transistor with Long-Termed Stability and Enhanced Current On/off Ratio

High Performance Transistors Based On Two Dimensional Materials

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

High field transport of high performance black phosphorus transistors

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor