Epitaxial Nucleation and Lateral Growth of High-Crystalline Black Phosphorus Films on Silicon

Yijun Xu,Xinyao Shi,Yushuang Zhang,Hongtao Zhang,Qinglin Zhang,Zengli Huang,Xiangfan Xu,Jie Guo,Han Zhang,Litao Sun,Zhongming Zeng,Anlian Pan,Kai Zhang
DOI: https://doi.org/10.1038/s41467-020-14902-z
IF: 16.6
2020-01-01
Nature Communications
Abstract:Black phosphorus (BP) is a promising two-dimensional layered semiconductor material for next-generation electronics and optoelectronics, with a thickness-dependent tunable direct bandgap and high carrier mobility. Though great research advantages have been achieved on BP, lateral synthesis of high quality BP films still remains a great challenge. Here, we report the direct growth of large-scale crystalline BP films on insulating silicon substrates by a gas-phase growth strategy with an epitaxial nucleation design and a further lateral growth control. The optimized lateral size of the achieved BP films can reach up to millimeters, with the ability to modulate thickness from a few to hundreds of nanometers. The as-grown BP films exhibit excellent electrical properties, with a field-effect and Hall mobility of over 1200 cm 2 V −1 s −1 and 1400 cm 2 V −1 s −1 at room temperature, respectively, comparable to those exfoliated from BP bulk crystals. Our work opens the door for broad applications with BP in scalable electronic and optoelectronic devices.
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