Abstract:Black phosphorus (BP) has received growing attention due to its suitable carrier mobility and switching ratio, tunable direct band gap, and strong in-plane anisotropy. In recent years, the applied research of both bulk and few-layer BP has yielded continuous breakthroughs, while the device applications with stable performance have lagged due to their poor environmental stability. Additionally, fabricating high-quality doped BP by a desirable chemical vapor transport (CVT) method has been challenging. Herein, the CVT approach with a constant temperature was employed to fabricate Sb-doped BP (Sb–BP) and Bi-doped BP (Bi–BP) to enhance the performance of pristine BP. The characterizations, including Raman, transmission electron microscopy, atomic force microscopy, and so forth, were employed to study the phase structure and properties of the as-grown crystals. The results suggest that BP and doped BP belong to an orthorhombic structure and show good crystallinity. Distinct from pristine BP, the light absorption and electrochemical properties of orthorhombic BP were improved by doping. Furthermore, the storage time of Sb–BP exceeds 65 days, while the degradation of pristine BP occurs within 38 days in ambient condition. The degradation rate of Sb–BP was slower than that of pristine BP even in the harsh environment, which indicates that the antioxidation of Sb–BP is outstanding. Hence, doping is a viable method to modify the properties of BP. This work provides useful guidance for preparing other doped BP and BP compounds, broadening the application field of the phosphorus family.

High yield growth of centimeter-sized black phosphorus single crystal thin flakes through bidirectional vapor transport

Growth of 2D Black Phosphorus Film from Chemical Vapor Deposition.

Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release

Large-scale growth of few-layer two-dimensional black phosphorus

Synthesis of High-Quality Bulk Single-Crystal Black Phosphorus by the Circulating Vapor Growth Approach

A clean transfer approach to prepare centimetre-scale black phosphorus crystalline multilayers on silicon substrates for field-effect transistors

Progress in the synthesis of 2D black phosphorus beyond exfoliation

Two-step heating synthesis of sub-3 millimeter-sized orthorhombic black phosphorus single crystal by chemical vapor transport reaction method

Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire

Chemical vapor transport growth of bulk black phosphorus single crystals

Synthesis of thin-film black phosphorus on a flexible substrate

Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films

Mid-Infrared, Optically Active Black Phosphorus Thin Films on Centimeter Scale

Ultrafast Electrochemical Expansion of Black Phosphorus Toward High-Yield Synthesis of Few-Layer Phosphorene

Electrochemical Delamination of Ultralarge Few‐Layer Black Phosphorus with a Hydrogen‐Free Intercalation Mechanism

In situ grown large-size highly crystalline black phosphorus thin film for self-driven photodetector

Fabrication of Doped Black Phosphorus Crystal by the Chemical Vapor Transport Method

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Synthesis and stabilization of black phosphorus and phosphorene: recent progress and perspectives

Liquid-phase exfoliation of black phosphorus and its applications

Black Phosphorus Radio-Frequency Transistors