Abstract:Recently, black phosphorus (BP) has attracted enormous attention as the potential materials for next‐generation photonic device applications due to the high carrier mobility and the narrow bandgap. However, the metal–semiconductor–metal (MSM) structure of BP photodetectors cannot achieve simultaneously high photoresponsivity and fast photoresponse, due to its natural surface defects, the thinness of absorption layer, and the instability of BP in the air, which limits the application of BP MSM structure photodetectors. Here, infrared photodetectors with the multilayer BP sandwiched between the top protective layer of boron nitride and the bottom Au electrodes are demonstrated. The BP photodetectors exhibit a fast photoresponse of ≈16 µs, a broadband photodetection up to ≈2 µm, a high light on/off ratio of ≈103 which is higher than most BP photodetectors, together with an acceptable photoresponsivity of ≈1.55 A W−1 for the wavelength of 1550 nm at room temperature. Scanning photocurrent microscopy measurements show that the mechanism of BP photodetectors is a combination of photovoltaic effect and photoconductive effect. This work demonstrates an effective way to design high‐performance photovoltaic/photoconductive devices based on 2D materials. Infrared photodetectors with the multilayer black phosphorus (BP) sandwiched between the top protective layer of boron nitride and bottom Au electrodes are demonstrated. The BP photodetectors exhibit a high light on/off ratio of ≈103, a fast photoresponse of ≈16 μs for the wavelength of 1550 nm and a broadband photodetection up to ≈2 μm.

Fast Photo-response of Black Phosphorus Photodetectors

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions

High Performance Near Infrared Photodetector Based on In-Plane Black Phosphorus P-N Homojunction

Black Phosphorus Radio-Frequency Transistors

Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Mid-infrared time-resolved photoconduction in black phosphorus

Single-detector Black Phosphorus Monolithic Spectrometer with High Spectral and Temporal Resolution

High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure

High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Ultrafast recovery time and broadband saturable absorption properties of black phosphorus suspension

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical P–n Heterojunctions

Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

In situ observation of electrical property of thin-layer black phosphorus based on dry transfer method

A black phosphorus photo-detector for multispectral, high-resolution imaging

High-performance Violet Phosphorus Photodetectors with Van Der Waals-assisted Contacts

In situ grown large-size highly crystalline black phosphorus thin film for self-driven photodetector