Abstract:Violet phosphorus/MoS2 heterostructure photodetector with superior air stability is constructed. Owing to the photogating effect of VP, the photodetector displays excellent performances with ultrahigh responsivity of 3.82¬†√ó¬†105 A¬†W‚ąí1, high detectivity of 9.17¬†√ó¬†1013¬†Jones, and extraordinary external quantum efficiency of 8.91¬†√ó¬†107%. This work opens new prospects for building VP‚Äźbased high‚Äźperformance optoelectronic devices. Violet phosphorus (VP), a newly emerging elemental 2D semiconductor, with attractive properties such as tunable bandgap, high carrier mobility, and unusual structural anisotropy, offers significant opportunities for designing high‚Äźperformance electronic and optoelectronic devices. However, the study on fundamental property and device application of 2D VP is seriously hindered by its inherent instability in ambient air. Here, a VP/MoS2 van der Waals heterostructure is constructed by vertically staking few‚Äźlayer VP and MoS2, aiming to utilize the synergistic effect of the two materials to achieve a high‚Äźperformance 2D photodetector. The strong optical absorption of VP combining with the type‚ÄźII band alignment of VP/MoS2 heterostructure make VP play a prominent photogating effect. As a result, the VP/MoS2 heterostructure photodetector achieves an excellent photoresponse performances with ultrahigh responsivity of 3.82 √ó 105¬†A¬†W‚Äď1, high specific detectivity of 9.17 √ó 1013 Jones, large external quantum efficiency of 8.91 √ó 107 %, and gate tunability, which are much superior to that of individual MoS2 device or VP device. Moreover, the VP/MoS2 heterostructure photodetector indicates superior air stability due to the effective protection of VP by MoS2 encapsulation. This work sheds light on the future study of the fundamental property and optoelectronic device application of VP.

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