Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions

Thayer S. Walmsley,Bhim Chamlagain,Tianjiao Wang,Zhixian Zhou,Ya-Qiong Xu
DOI: https://doi.org/10.1002/adom.201800832
2019-01-13
Abstract:We study the rise and decay times in BP-MoS2 heterojunctions through gate- and wavelength-dependent scanning photocurrent measurements. Our results have shown that the Schottky barrier at the MoS2-metal interface plays an important role in the photoresponse dynamics of the heterojunction. When the MoS2 channel is in the on-state, photo-excited carriers can tunnel through the narrow depletion region at the MoS2-metal interface, leading to a short carrier transit time. A response time constant of 13 {\mu}s has been achieved in both the rising and decaying regions regardless of the incident laser wavelength, which is comparable or higher than those of other BP-MoS2 heterojunctions as well as BP and MoS2 based phototransistors. On the other hand, when the MoS2 channel is in the off-state the resulting sizeable Schottky barrier and depletion width make it difficult for photo-excited carriers to overcome the barrier. This significantly delays the carrier transit time and thus the photoresponse speed, leading to a wavelength-dependent response time since the photo-excited carriers induced by short wavelength photons have a higher probability to overcome the Schottky barrier at the MoS2-metal interface than long wavelength photons. These studies not only shed light on the fundamental understanding of photoresponse dynamics in BP-MoS2 heterojunctions, but also open new avenues for engineering the interfaces between two-dimensional (2D) materials and metal contacts to reduce the response time of 2D materials based optoelectronic devices.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the photoelectric response time (including rise time and decay time) of the black phosphorus (BP) and molybdenum disulfide (MoS₂) heterojunction under different gate voltages and incident light wavelengths. Specifically, the research focuses on: 1. **Influence of Schottky Barrier**: Explore how the Schottky barrier at the MoS₂ - metal interface affects the dynamic behavior of the photoelectric response. When the MoS₂ channel is in the on - state, photo - excited carriers can tunnel through the narrow depletion region, resulting in a shorter carrier transport time; when the MoS₂ channel is in the off - state, the larger Schottky barrier and the width of the depletion region make it difficult for photo - excited carriers to overcome the barrier, thus significantly delaying the carrier transport time. 2. **Wavelength Dependence**: Study the influence of light of different wavelengths on the photoelectric response time. For the MoS₂ channel in the off - state, short - wavelength photons, due to their higher energy, are more likely to enable photo - excited carriers to overcome the Schottky barrier, so the response time is relatively fast; for long - wavelength photons, the lower energy makes it more difficult for photo - excited carriers to overcome the barrier, resulting in a longer response time. 3. **Optimizing the Performance of Photodetectors**: Through the above research, the behavioral mechanism of the photoelectric response time in two - dimensional material heterojunctions is revealed, and a new approach is provided for reducing the response time of photodetectors by engineering the interface between two - dimensional materials and metal contacts. ### Main Findings - When the MoS₂ channel is in the on - state, the photoelectric response time constant is 13 µs and is independent of the incident laser wavelength. - When the MoS₂ channel is in the off - state, the photoelectric response time increases as the incident laser wavelength increases because short - wavelength photons have higher energy and can more easily overcome the Schottky barrier. - By adjusting the gate voltage, the state of the MoS₂ channel can be effectively changed, thereby significantly affecting the photoelectric response time. These studies not only deepen the understanding of the photoelectric response kinetics in the BP - MoS₂ heterojunction but also provide new ideas for future applications in high - speed electronic and optoelectronic devices.