Abstract:Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates the scaling potential for future generation devices based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional electronic properties such as anisotropy and high mobility. However, due to its ultrathin body nature, few layer black phosphorus-metal contact behaves differently than conventional Schottky barrier (SB) junctions, and the mechanisms of its carrier transport across such a barrier remain elusive. In this work, we examine the transport characteristic of metal-black phosphorus contact under varying temperature. We elucidated the origin of apparent negative SB heights extracted from classical thermionic emission model and also the phenomenon of metal-insulator transition observed in the current-temperature transistor characteristic. In essence, we found that the SB height can be modulated by the back-gate voltage, which beyond a certain critical point becomes so low that the injected carrier can no longer be described by the conventional thermionic emission theory. The transition from transport dominated by a Maxwell-Boltzmann distribution for the high energy tail states, to that of a Fermi distribution by low energy Fermi sea electrons, is the physical origin of the observed metal-insulator transition. We identified two distinctive tunneling limited transport regimes in the contact: vertical and longitudinal tunneling.

Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

Plasmonic Enhanced Polarization Sensitive Black Phosphorus Photodetection Device

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices*

Ohmic contact engineering in few-layer black Phosphorus field effect transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Surface Functionalization of Black Phosphorus Via Potassium Toward High-Performance Complementary Devices.

Te-Doped Black Phosphorus Field-Effect Transistors

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

High field transport of high performance black phosphorus transistors

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Surface Engineering of Two-Dimensional Black Phosphorus for Advanced Nanophotonics

The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications