Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Yexin Deng,Zhe Luo,Nathan J. Conrad,Han Liu,Yongji Gong,Sina Najmaei,Pulickel M. Ajayan,Jun Lou,Xianfan Xu,Peide D. Ye

DOI: https://doi.org/10.1021/nn5027388

2014-07-13

Abstract:Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to realize a two - dimensional van der Waals heterojunction p - n diode based on black phosphorus (black phosphorus) and monolayer molybdenum disulfide (monolayer MoS₂), and explore its applications in photodetection and photovoltaic energy conversion.

Specifically, the researchers aim to:

1. **Construct p - n heterojunction**: Use black phosphorus as a p - type semiconductor and monolayer MoS₂ as an n - type semiconductor to form an atomically sharp heterojunction interface through van der Waals forces. This is the first time that black phosphorus has been used to construct such a 2D heterojunction.

2. **Achieve electrical tuning characteristics**: Through back - gate voltage regulation, effective adjustment of the current rectification characteristics of the p - n diode has been achieved. Research shows that as the back - gate voltage changes, the rectification ratio and the ideal factor also change accordingly, indicating the formation of a good p - n heterojunction.

3. **Photodetection performance**: The study found that this p - n diode exhibits significant photo - response characteristics under illumination. In particular, at a wavelength of 633 nm, the maximum photodetection responsivity reaches 418 mA/W, which is much higher than previously reported black - phosphorus phototransistors and other 2D - material p - n diodes.

4. **Photovoltaic energy conversion**: The experiment also demonstrated the potential of this device in photovoltaic energy conversion, obtaining an external quantum efficiency (EQE) of 0.3%. Theoretically, by further optimizing the thickness of black phosphorus, the EQE can be increased to 18%.

5. **Potential for large - area applications**: Through photocurrent mapping experiments, the researchers verified that the current is mainly generated in the entire overlapping p - n junction area, which provides the possibility for future development of large - area transparent and flexible solar cells and photodetectors.

In summary, this research not only successfully realized a new - type 2D p - n heterojunction diode, but also laid the foundation for its applications in high - performance electronic and optoelectronic devices.