TUNING STRUCTURAL AND ELECTRONIC PROPERTIES OF MoS2 NANOTUBES BY TRANSVERSE ELECTRIC FIELD

Y. Z. Wang,B. L. Wang,Q. F. Zhang,R. Huang,B. L. Gao,F. J. Kong,X. Q. Wang
2014-01-01
Chalcogenide Letters
Abstract:The structural and electronic properties of MoS2 nanotubes (NTs) under the transverse electronic field are investigated by density functional theory calculations. Under the transverse electric field, the circular cross-sections of the MoS2 NTs are deformed to elliptic, the band gap of the MoS2 NTs almost linearly decreases with increasing the strength of electric field, and the modulation of the structure and band gap is dependent on the tube diameter. It is also found that a suitable critical transverse electric field could induce the semiconductor-metal transition in MoS2 NTs. Furthermore, the electric field can tune the effective mass of the carriers of the MoS2 NTs.
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