Abstract:Electric fields can break the structural inversion symmetry in bilayer 2D materials, providing a way of tuning the magnetic moment and Berry curvature. This effect can be probed directly in bilayer MoS2 using optical measurements. Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time-reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken1. In certain two-dimensional electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field2,3. In principle, this offers the possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control4,5. Here we investigate this possibility using polarization-resolved photoluminescence of bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible spectrum6,7 allowing direct optical probing5,8,9,10,11,12. We find that in bilayer MoS2 the circularly polarized photoluminescence can be continuously tuned from −15% to 15% as a function of gate voltage, whereas in structurally non-centrosymmetric monolayer MoS2 the photoluminescence polarization is gate independent. The observations are well explained as resulting from the continuous variation of orbital magnetic moments between positive and negative values through symmetry control.

PHYSICAL REVIEW B 102, 235418 (2020) Tuning band gaps in twisted bilayer MoS2

Tuning Band Gaps in Twisted Bilayer MoS_2

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Tuning flat bands by interlayer interaction, spin-orbital coupling, and external fields in twisted homotrilayer MoS$_2$

Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

Tunable Electronic Structure in Twisted Bilayer WTe2

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

Tunable Multi-Bands in Twisted Double Bilayer Graphene

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle

Electrical Tuning of Valley Magnetic Moment Through Symmetry Control in Bilayer MoS2

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Tuning the Electronic Structure of Monolayer Graphene/mos2van Der Waals Heterostructures Via Interlayer Twist

Tunable bandgaps and flat bands in twisted bilayer biphenylene carbon

Tuning Band Gaps in Twisted Bilayer Borophene

Intrinsic band gap and electrically tunable flat bands in twisted double bilayer graphene

Tunable band gap in twisted bilayer graphene