Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides

Shaili Sett,Rahul Debnath,Arup Singha,Shinjan Mandal,Jyothsna K,Monika Bhakar,Kenji Watanabe,Takashi Taniguchi,Varun Raghunathan,Goutam Sheet,Manish Jain,Arindam Ghosh
2024-05-28
Abstract:At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the phenomena of charge inhomogeneity and non - locality observed in graphene field - effect transistors on nearly parallel twisted bilayer transition - metal dichalcogenides (TMDCs). Specifically, the researchers focus on how the interfacial ferroelectricity, which is caused by the moiré superlattice formed by the underlying twisted TMDCs in such a heterostructure, affects the electrical transport properties in graphene. By studying in detail the electrical transport properties of dual - gate graphene field - effect transistors on 3R - stacked twisted bilayer WSe₂, the paper explores the charge inhomogeneity that occurs as the electric displacement field (\(D\)) increases and the accompanying non - local voltage signals. These phenomena reveal the valley - symmetry breaking in the graphene channel due to the moiré superlattice and the simultaneous modulation of charge and valley currents by the resulting finite - size domains. The main contribution of the paper lies in showing how to efficiently regulate the charge distribution and transport properties in graphene by controlling the interfacial ferroelectricity, which may provide new ideas for developing new types of twisted - electronics application devices. In addition, the paper also explores the relationship between charge inhomogeneity and non - local resistance under different electric fields, as well as the relationship between these effects and the domain structure in the moiré superlattice, providing important experimental evidence for understanding ferroelectricity and related phenomena in two - dimensional materials.