Abstract:Although graphene-based heterostructures exhibit excellent intrinsic properties for device scaling, fabricating low Schottky barrier is still a great challenge to the electrical transport behaviors of nanoelectronic devices. Exploring excellent materials for electronic devices are a research hotspot at present. Graphene not only exhibits excellent physical strength and specific surface area, but also presents high carrier mobility and thermal conductivity. Therefore, graphene has been developed in many fields such as energy, catalysis, etc. However, graphene is a special material with zero band gap, and its electrons and holes are easy to compound, which seriously hinders its development in the applications of electronic and optoelectronic devices. Two-dimensional transition metal dichalcogenides (TMDs) have the advantages of controllable band gap properties, which makes them have a good development in logic circuits and photodetectors. As one of TMD S , MoSe 2 possesses the advantages of narrower band gap, better electron hole separation and stronger oxidation resistance in the environment. Therefore, the design of graphene and MoSe 2 heterostructures is an ideal choice for a new generation of nanoelectronic devices. Here, we investigate systematically the effects of asymmetric O doping on the electronic properties and Schottky barrier of graphene/MoSe 2(1– x ) O 2 x heterostructure for the first time by first-principles calculations incorporating semiempirical dispersion-correction scheme. The results indicate that graphene and MoSe 2 monolayer can form a stable van der Waals heterostructure with preserving their own intrinsic properties. In addition, an n-type schottky contact with a barrier height of 0.558 eV is obtained. Further, it is found that the type and the height of the Schottky barrier can be controlled by changing the concentration and sites of the O dopant at interface. By increasing the concentration of the O dopant inside the interface, the transition from an n-type Schottky contact to an Ohmic contact can be realized, and a low n-type Schottky barrier is gained with increasing the concentration of the O dopant outside the interface for highly efficient charge transfer. The barrier height of heterostructure decreases from 0.558 eV to 0.112 eV when the O dopant is doped on the outer interface. Finally, as a complement to previous results, it is confirmed that the redistribution of interfacial charges leads the Fermi level to shift, and thus determining the type and the height of Schottky barrier. This study may provide theoretical guidance for designing and manufacturing the MoSe 2 - based nano field effect transistors.

Maximizing Schottky barrier modulation in graphene-WSe 2 /MoSe 2 heterojunction barristor through Dirac-cone induced phenomenon

Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor

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Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

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Multimode Signal Processor Unit Based on the Ambipolar WSe2-Cr Schottky Junction

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Analysis of the relationship between the contact barrier and rectification ratio in a two-dimensional P–N heterojunction

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Lowering the Schottky Barrier Height of G/WSSe Van Der Waals Heterostructures by Changing the Interlayer Coupling and Applying External Biaxial Strain

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

2D SnSe-based Vdw Heterojunctions: Tuning the Schottky Barrier by Reducing Fermi Level Pinning.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Lateral graphene p–n junctions formed by the graphene/MoS2 hybrid interface

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Lateral Monolayer MoSe2 -Wse2 P-N Heterojunctions with Giant Built-In Potentials.

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures