Abstract:Although graphene-based heterostructures exhibit excellent intrinsic properties for device scaling, fabricating low Schottky barrier is still a great challenge to the electrical transport behaviors of nanoelectronic devices. Exploring excellent materials for electronic devices are a research hotspot at present. Graphene not only exhibits excellent physical strength and specific surface area, but also presents high carrier mobility and thermal conductivity. Therefore, graphene has been developed in many fields such as energy, catalysis, etc. However, graphene is a special material with zero band gap, and its electrons and holes are easy to compound, which seriously hinders its development in the applications of electronic and optoelectronic devices. Two-dimensional transition metal dichalcogenides (TMDs) have the advantages of controllable band gap properties, which makes them have a good development in logic circuits and photodetectors. As one of TMD S , MoSe 2 possesses the advantages of narrower band gap, better electron hole separation and stronger oxidation resistance in the environment. Therefore, the design of graphene and MoSe 2 heterostructures is an ideal choice for a new generation of nanoelectronic devices. Here, we investigate systematically the effects of asymmetric O doping on the electronic properties and Schottky barrier of graphene/MoSe 2(1– x ) O 2 x heterostructure for the first time by first-principles calculations incorporating semiempirical dispersion-correction scheme. The results indicate that graphene and MoSe 2 monolayer can form a stable van der Waals heterostructure with preserving their own intrinsic properties. In addition, an n-type schottky contact with a barrier height of 0.558 eV is obtained. Further, it is found that the type and the height of the Schottky barrier can be controlled by changing the concentration and sites of the O dopant at interface. By increasing the concentration of the O dopant inside the interface, the transition from an n-type Schottky contact to an Ohmic contact can be realized, and a low n-type Schottky barrier is gained with increasing the concentration of the O dopant outside the interface for highly efficient charge transfer. The barrier height of heterostructure decreases from 0.558 eV to 0.112 eV when the O dopant is doped on the outer interface. Finally, as a complement to previous results, it is confirmed that the redistribution of interfacial charges leads the Fermi level to shift, and thus determining the type and the height of Schottky barrier. This study may provide theoretical guidance for designing and manufacturing the MoSe 2 - based nano field effect transistors.

Electronic Properties and Tunable Schottky Barrier of Non-Janus MoSSe/graphene Heterostructures

Tuning the N-Type Contact of Graphene on Janus MoSSe Monolayer by Strain and Electric Field

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Controllable Schottky Barriers and Contact Types of BN Intercalation Layer in Graphene/MoSi2As4 vdW Heterostructures via Applying External Electrical Field

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

Effects of Electric Field and Interlayer Coupling on Schottky Barrier of Germanene/mosse Vertical Heterojunction

Highly Sensitive Band Alignment of the Graphene/MoSi 2 N 4 Heterojunction via an External Electric Field

Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

The Role of Permanent and Induced Electrostatic Dipole Moments for Schottky Barriers in Janus MXY/Graphene Heterostructures: a First Principles Study

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Effects Of Interlayer Coupling And Electric Fields On The Electronic Structures Of Graphene And Mos2 Heterobilayers

Schottky Barrier Modification of GaSSe/graphene Heterojunctions Based on Density Functional Theory

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

First-principles Study on Graphene/wsi2n4 Van Der Waals Heterostructure: Tuning the Schottky Barrier

Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures

Graphene/WGe2N4 van der Waals heterostructure: Controllable Schottky barrier by an electric field

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Regulation and Control of Schottky Barrier in Graphene/mose2 Heteojuinction by Asymmetric Oxygen Doping

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS2 heterostructure

First Principles Studies on Electronic and Transport Properties of Edge Contact Graphene-Mos2 Heterostructure