Abstract:The contacts between semiconductor and metal are vital in the fabrication of nano electronic and optoelectronic devices. The contact type has a great influence on the function realization and performance of the device. In order to prepare multifunctional devices with high performance, it is necessary to modulate the barrier height and contact type at the interface. First-principles calculations based on the density functional theory (DFT) are implemented in the VASP package. The generalized gradient approximation of Perdew, Burke, and Ernzerhof (GGA-PBE) with van der Waals (vdW) correction proposed by Grimme (DFT-D3) is chosen due to its good description of long-range vdW interactions. It is demonstrated that weak vdW interactions dominate between graphene and InSe with their intrinsic electronic properties preserved. We find that the n-type ohmic contact is formed at the graphene/InSe interface with the Fermi level through the conduction band of InSe (ΦBn < 0). The Fermi level of graphene/InSe heterostructure moves down to below the Dirac point of graphene layer, which results in p-type (hole) doping in graphene. Moreover, the external electric field is effective to tune the Schottky barrier, which can control not only the Schottky barrier height but also the type of contact. With the negative external electric field varying from 0 to –1 V/nm, the conduction band minimum of InSe below the Fermi level declines gradually but the n-type ohmic contact is still preserved. Nevertheless, with the positive external electric field varying from 0 to 0.8 V/nm, the conduction band minimum of InSe shifts upward and across the Fermi level, the conduction band minimum of InSe is closer to the Fermi level than the valence band maximum, which indicates that the n-type Schottky contact is formed. The Fermi level moves from the the conduction band minimum to the valence band maximum of InSe when the positive external electric field increases from 0.8 V/nm to 2 V/nm. The n-type Schottky barrier height exceeds the p-type Schottky barrier height gradually, which demonstrates that the positive external electric field transforms the n-type Schottky contact into the p-type Schottky contact at the graphene/InSe interface. When the positive external electric field exceeds 2 V/nm, the valence band of InSe moves upward and cross the Fermi level (ΦBp < 0), the ohmic contact is obtained again. Meanwhile, p-type (hole) doping in graphene is enhanced under negative external electric field and a large positive external electric field is required to achieve n-type (electron) doping in graphene. The external electric field can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/InSe interface.

Tuning the N-Type Contact of Graphene on Janus MoSSe Monolayer by Strain and Electric Field

Effects of out-of-plane strains and electric fields on the electronic structures of graphene/MTe (M = Al, B) heterostructures.

First-principles Study on Graphene/wsi2n4 Van Der Waals Heterostructure: Tuning the Schottky Barrier

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS2 heterostructure

Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

Highly Sensitive Band Alignment of the Graphene/MoSi 2 N 4 Heterojunction via an External Electric Field

Tuning the Graphene Work Function by Uniaxial Strain

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Controllable Schottky Barriers and Contact Types of BN Intercalation Layer in Graphene/MoSi2As4 vdW Heterostructures via Applying External Electrical Field

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene

First-principles study of controllable contact types in Janus MoSH/GaN van der Waals heterostructure

First Principles Studies on Electronic and Transport Properties of Edge Contact Graphene-Mos2 Heterostructure

Tuning Schottky Barrier in Graphene/inse Van Der Waals Heterostructures by Electric Field

Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure

Strain engineering on the electronic properties and interface contact of graphene/GeN3 van der Waals heterostructure

Ohmic contact in graphene and hexagonal III-V monolayer (GaP, GaAs, InP, and InAs) van der Waals heterostructures: Role of electric field

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field