Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study
Fei Yang,Zhenguo Zhuo,Junnan Han,Xincheng Cao,Yue Tao,Le Zhang,Wenjin Liu,Ziyue Zhu,Yuehua Dai
DOI: https://doi.org/10.1016/j.spmi.2021.106935
IF: 3.22
2021-08-01
Superlattices and Microstructures
Abstract:<p>Heterostructures have attracted significant attention because of their interlayer van der Waals interactions, in this work, six stacking models of GeC/MoS<sub>2</sub> heterostructure were constructed, the AB stacking model has the lowest energy and the most stable interlayer spacing between GeC and MoS<sub>2</sub> is 3.81 Å. Based on First-principles calculations, we explored the structural, electronic and optical properties of GeC/MoS<sub>2</sub> heterostructure and its response to electric field and biaxial strain. The results show that built-in electric field formed at the GeC/MoS<sub>2</sub> interface, which effectively separated photo-generated electrons and holes. Meantime, the absorption of GeC/MoS<sub>2</sub> located at ∼200nm was enhanced compared with monolayers. When the electric field strength increased from -0.7 V/Å to 0.65 V/Å, the band gap value of GeC/MoS<sub>2</sub> heterostructure increased from 0eV to 1.21eV linearly, then decreased continuously to 0eV with the electric field strength increasing from 0.65 V/Å to 0.8 V/Å. Lastly, with the biaxial strain increasing from -6% to 5%, the gap value of GeC/MoS<sub>2</sub> heterostructure increased slowly from 0 eV to 1.19eV, then decreased rapidly to 0 eV when the biaxial strain increased from 5% to 8%, the transitions of direct-to-indirect band gap and N-to-P type characteristic occurred when biaxial strain was 3% and -2% respectively. Results show that the GeC/MoS<sub>2</sub> heterostructure has application prospects in ultraviolet, nanoelectronic, and pressure sensitive devices.</p>
physics, condensed matter