Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study

Fei Yang,Zhenguo Zhuo,Junnan Han,Xincheng Cao,Yue Tao,Le Zhang,Wenjin Liu,Ziyue Zhu,Yuehua Dai

DOI: https://doi.org/10.1016/j.spmi.2021.106935

IF: 3.22

2021-08-01

Superlattices and Microstructures

Abstract:<p>Heterostructures have attracted significant attention because of their interlayer van der Waals interactions, in this work, six stacking models of GeC/MoS₂ heterostructure were constructed, the AB stacking model has the lowest energy and the most stable interlayer spacing between GeC and MoS₂ is 3.81 Å. Based on First-principles calculations, we explored the structural, electronic and optical properties of GeC/MoS₂ heterostructure and its response to electric field and biaxial strain. The results show that built-in electric field formed at the GeC/MoS₂ interface, which effectively separated photo-generated electrons and holes. Meantime, the absorption of GeC/MoS₂ located at ∼200nm was enhanced compared with monolayers. When the electric field strength increased from -0.7 V/Å to 0.65 V/Å, the band gap value of GeC/MoS₂ heterostructure increased from 0eV to 1.21eV linearly, then decreased continuously to 0eV with the electric field strength increasing from 0.65 V/Å to 0.8 V/Å. Lastly, with the biaxial strain increasing from -6% to 5%, the gap value of GeC/MoS₂ heterostructure increased slowly from 0 eV to 1.19eV, then decreased rapidly to 0 eV when the biaxial strain increased from 5% to 8%, the transitions of direct-to-indirect band gap and N-to-P type characteristic occurred when biaxial strain was 3% and -2% respectively. Results show that the GeC/MoS₂ heterostructure has application prospects in ultraviolet, nanoelectronic, and pressure sensitive devices.</p>

physics, condensed matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to regulate the optical and electronic properties of GeC/MoS₂ van der Waals heterojunctions through electric fields and biaxial strains. Specifically, the researchers constructed six different GeC/MoS₂ heterojunction stacking models and, based on first - principles calculations, explored the structural, electronic, and optical properties of these heterojunctions under different electric fields and biaxial strains. The main objectives of the paper are:

1. **Determine the most stable heterojunction model**: By calculating the binding energies of the six stacking models, it was determined that the AB stacking model has the lowest binding energy, indicating that its structure is the most stable, with a layer spacing of 3.81 Å.

2. **Analyze the influence of electric fields on electron transport properties**: The study found that applying an electric field can significantly change the bandgap of the heterojunction. When the electric field strength increases from - 0.7 V/Å to 0.65 V/Å, the bandgap value increases linearly to 1.21 eV, and then, as the electric field strength further increases to 0.8 V/Å, the bandgap value rapidly drops to 0 eV. The presence of the electric field leads to the formation of a built - in electric field, which effectively separates photogenerated electrons and holes.

3. **Explore the influence of biaxial strain on the energy band structure**: By applying biaxial strains from - 6% to 8%, the researchers found that the bandgap value of the heterojunction first slowly increases to 1.19 eV and then rapidly drops to 0 eV as the strain increases. When the biaxial strain is 3%, the bandgap changes from a direct bandgap to an indirect bandgap; when the strain is - 2%, the heterojunction changes from N - type to P - type.

4. **Evaluate potential applications**: The research results show that GeC/MoS₂ heterojunctions have broad application prospects in fields such as ultraviolet devices, nanoelectronics, and pressure sensors.

Through these studies, the paper aims to provide a theoretical basis and experimental guidance for the future design and development of new photoelectric and electronic devices based on GeC/MoS₂ heterojunctions.