Abstract:ContextTwo-dimensional semiconductor materials have received much attention in recent years due to their wide variety of applications in the field of nano-optoelectronic devices. In this project, we applied stresses ranging from −6 to +6% to the ZrSe2/HfSe2 heterostructure and systematically investigated its electrical and optical properties. It is discovered that stress can effectively modulate the forbidden bandwidth of the ZrSe2/HfSe2 heterojunction; whereas, under compressive stress, the forbidden bandwidth of the material decreases further until the bandgap is zero, leading to the material’s transformation from semiconductor to metal. The forbidden band gap of the ZrSe2/HfSe2 heterojunction increases with increasing horizontal biaxial tensile strain. We discovered that the light absorption performance of this heterostructure is significantly better than that of its similar monomolecular layer and that its light absorption intensity can reach an order of magnitude of 104. Under compressive and tensile stresses, the ZrSe2/HfSe2 heterojunctions exhibit different degrees of red or blue shift. The results indicate that constructing ZrSe2/HfSe2 heterojunctions and applying horizontal biaxial stresses to them can significantly modulate the optoelectronic properties of the materials. ZrSe2/HfSe2 heterojunction is a new type of high-performance photogenerated carrier transport device with a wide range of applications.MethodsThe calculations in this study are carried out the first principles approach of density functional theory, as implemented in the CASTEP module of Materials-Studio2019. The researchers used an ultrasoft reaction potential to calculate the interactions between the ion core and the electrons and applied the Perdew-Burke-Ernzerhof (PBE) and the generalized gradient approximation (GGA) to perform the calculations. The Monkhorst-Pack technique was employed to create the k-point samples utilized for integration on the Brillouin zone, and the k-point grid was uniformly 6 × 6 × 1. In addition, in order to avoid interactions between the atomic layers affecting the properties and stability of the material, such interactions were prevented by adding a 30 Å vacuum layer. Using a plane-wave energy cutoff of 500 eV and the convergence accuracy of the iterative process was set to 1 × 10−5 eV to ensure the accuracy of the computational results, and in addition. The maximum stress in the lattice was limited to less than 0.05 GPa or the interaction force between neighboring atoms was lower than 0.03 eV/Å. For the calculation of the properties of the optical properties, a k-point grid of 18 × 18 × 1 is used for optimization, and the polarization direction of the material is not taken into account, considering that the material is isotropic. This study proposes to apply the Tkatchenko-Scheffler (TS) dispersion correction method in DFT-D to appropriately represent the interlayer van der Waals interaction forces to solve inaccuracies in the computation of van der Waals interactions via density functional theory.

Strain-tunable electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals heterojunction: A first principles calculation

Effect of the normal compressive strain and electric filed on the electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals Heterojunction: A first principles calculation

Electric Field and Strain Tuned the Electronic and Optical Properties of Zr2CO2/MoSe2 Van Der Waals Heterojunction

Electric fields and strains effect on the electronic and optical properties of Zr2CO2/MoSSe van der Waals heterostructure

Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures

Strain engineering of electronic properties, quantum capacitance, and photocatalytic properties of Zr2CO2 MXene

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

First-Principle Studies of Mechanical, Electronic Properties and Strain Engineering of Metal-Organic Framework

Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study

Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Strain-induced effects on the optoelectronic properties of ZrSe2/HfSe2 heterostructures

First principles study of BAs/MoSi2N4 van der Waals heterostructure: Tunable Electronic and Optical Properties via Vertical Strain

Density Functional Theory Study of the Electronic and Optical Properties of SnSe 2 /MoSe 2 Heterostructures under Strain and Electric Field: Implications for Optoelectronic Devices

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Electronic and interfacial properties of 2D mxene/blue phosphorene heterostructures: impact of external strain for thermoelectric applications

Strain-tunable Electronic and Optical Properties of Novel MoSSe/InSe Van Der Waals Heterostructures

The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe2/PtS2 van der Waals Heterostructure

Electronic Properties of MoS2/Be2C Van Der Waals Heterostructure: Effect of Bi-axil Strain and Vertical Electric Field