Layer Engineering of 2D Semiconductor Junctions.

Yongmin He,Ali Sobhani,Sidong Lei,Zhuhua Zhang,Yongji Gong,Zehua Jin,Wu Zhou,Yingchao Yang,Yuan Zhang,Xifan Wang,Boris Yakobson,Robert Vajtai,Naomi J. Halas,Bo Li,Erqing Xie,Pulickel Ajayan
DOI: https://doi.org/10.1002/adma.201600278
IF: 29.4
2016-01-01
Advanced Materials
Abstract:A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.
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