Abstract:Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.

Metal-2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning

Fermi-level depinning in metal-2D multilayered semiconductor junctions

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

Charge distribution at metal-multilayered semiconductor interfaces

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Lateral layered semiconductor multijunctions for novel electronic devices

Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer devices

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Theoretical Study of Intercalation Effects: Graphene and hBN Layers in Metal and Monolayer Black Phosphorus Contacts