Abstract:2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe2/h-BN heterojunctions. In our initial exploration of tellurium-based semiconducting TMDs, we directed our attention to MoTe2 crystals with thicknesses exceeding 12 nm. Our primary focus centered on investigating the transport characteristics and quantitatively assessing the surface interface heterostructure. Our transconductance (gm) measurements indicate that the very efficient carrier modulation with an ILG FET is two times larger than standard back gating, and it demonstrates unipolarity of the device. The ILG FET exhibited highly unipolar p-type behavior with a high on/off ratio, and it significantly increased the mobility in MoTe2/h-BN heterochannels, achieving improvement as one of the highest recorded mobility increments. Specifically, we observed hole and electron mobility values ranging from 345 cm2 V-1 s-1 to 285 cm2 V-1 s-1 at 80 K. We predict that our ability to observe the intrinsic, heterointerface conduction in the channels was due to a drastic reduction of the Schottky barriers, and electrostatic gating is suggested as a method for controlling the phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous structural phase transitions throughout the sample, achieved through electrostatic doping control, presents new opportunities for developing phase change devices using atomically thin membranes.

Nonvolatile N-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating.

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Carrier Modulation of Ambipolar Few‐Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

P-type polar transition of chemically doped multilayer MoS2 transistor

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Liquid-Gated Electric-Double-Layer Transistor On Layered Metal Dichalcogenide, Sns2